Millimeter-wave low noise metamorphic HEMT amplifiers and devices on GaAs substrates

Abstract

MHEMT devices with 60% indium channels gave transport characteristics similar to An excellent 0.61 dB minimum noise figure and 11.8 dB associated gain at 26 GHz, have been obtained for a InP-based HEMTs with room-temperature sheet InAlAsAnGaAs metamorphic HEMT on a GaAs densities and mobilities of 3 . 2~1 0 '~ cm-2 and substrate. 10,500 cm2N.s. Atomic force microscopy Low-noise amplifiers show under 1.8 dB noise figure showed an RMS surface roughness of 11 W. The with gain greater than 24 dB across 27 -32 GHz. excellent channel transport properties and surface morphology are indicative of the high