Millimeter-Wave IMPATT Sources for Communication Applications

Abstract

FM transmitter oscillator of 400 mW output power at 60 GHz and 275 mW IMPATT diodes and varactor-tuned local oscillators were developed for data rate.

A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

“…The fundamental device characteristics such as large-signal negative conductance ( G ( ω )), susceptance ( B ( ω )), negative resistance ( Z R ( ω )), reactance ( Z X ( ω )), and Q -factor ( Q p = − B p /G p , where G p and B p are the large-signal peak negative conductance and corresponding susceptance, respectively, at optimum frequency ( f p )) are investigated. Considering a circular cross-sectional area of the device, A 0 = π ( D 0 / 2) 2 ; where D 0 is the device effective p + - n junction diameter, the large-signal negative conductance ( G ( ω )), susceptance ( B ( ω )) normalized with respect to the device junction area A 0 are their respective effective values at the voltage generator fundamental frequency. These values are obtained by detailed Fourier analysis of the terminal current and voltage waveforms.…”

“…The series resistance due to p + -layer can be obtained from the following relation: where ( D m +1 − D m ) = ( D S −1 − D 0 )/( S −1) for 0 ≤ m ≤ ( S −2). The total fixed electrical series resistance due to upper side ( W Au_up , W Au_up ) and lower side ( W Au_dw , W Au_dw ) contact layers, the electroplated gold layer ( W Au_el ), a p + -contact layer, and the n + -substrate layer ( W n + ) is given by where the area of the device below the p + -layer is A S = π ( D S /2) 2 ; D S is the diameter of the device below the p + -layer. The resistivity of gold ( ρ Au ) and chromium ( ρ Cr ) layers are taken from [17].…”

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

“…Among two-terminal solid-state sources impact avalanche transit time (IMPATT) devices have already emerged as high-power, high-efficiency solid-state sources for both microwave (3-30 GHz) and millimeter-wave (30-300 GHz) frequency bands (Midford and Bernick 1979;Chang et al 1977;Gray et al 1969). Si and GaAs IMPATTs are already established as powerful and efficient sources at different millimeter-wave window frequencies (Luy et al 1987;Dalle et al 1990;Luschas et al 2002a, b;Shih et al 1983;Eisele and Haddad 1995).…”

Effects of tunnelling current on millimetre-wave IMPATT devices

“…Higher-resolution, higher penetrating power through cloud, dust, fog, etc., requirement of low voltage power supplies and reduced system size, etc., are some important advantages of mm-wave and sub-mm-wave frequencies (Chang, Hellum, Paul, & Weller, 1977;Gray, Kikushima, Morentc, & Wagner, 1969;Midford & Bernick, 1979). The low DC to RF conversion efficiency of the IMPATT devices operating at these frequencies can be improved through the use of impurity bumps in the doping profile of the diode leading to quasi-Read structures such as hi-lo and lo-hi-lo (Mukherjee & Mazumder, 2009).…”