Millimeter-wave chip set for 77&amp;#x2013;81 GHz automotive radar application

Demirel, Nejdat; Severino, Raffaele; Ameziane, Chama; Taris, Thierry; Bégueret, Jean-Baptiste; Kerhervé, Eric; Mariano, André; Pache, Denis; Belot, Didier

doi:10.1109/newcas.2011.5981303

Cited by 17 publications

(11 citation statements)

References 2 publications

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“…This FOM includes the most relevant parameters for evaluating LNAs for low‐power, high‐gain, low‐noise, and wideband applications. Table is a summary of the implemented 57–81 GHz CMOS LNA, and recently reported state‐of‐the‐art CMOS and SiGe BiCMOS LNAs with operation frequency around 77 GHz in . It is noteworthy that our LNA exhibits both low P DC and one of the lowest NFs and highest FOMs.…”

Section: Measurement Results and Discussionmentioning

confidence: 98%

“…where S 21 is the average power gain in magnitude; BW[GHz] refers to the 3 dB‐bandwidth in GHz; (NF‐1) is the excess NF in magnitude, and P DC [mW] refers to power consumption in mW. This FOM includes the most relevant parameters for evaluating LNAs for low‐power, high‐gain, low‐noise, and wideband applications.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

“…Lately, although several studies have reported excellent 77 GHz (or switchable 60/77‐GHz dual‐band) CMOS and SiGe BiCMOS LNAs , as a whole, the performances of these LNAs are not adequate. For instance, in , a single cascode stage 77–81 GHz LNA in 0.13 µm SiGe BiCMOS process with current‐gain cutoff frequency/maximum oscillation frequency ( f T / f max ) of 230/280 GHz was demonstrated. Though low P DC of 9 mW was achieved, its S 21 of 8.5 ± 1.5 dB and simulated NF of 7.2 dB (at 82 GHz) were not good enough.…”

Section: Introductionmentioning

confidence: 99%

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9.99 mW 4.8 dB NF 57-81 GHz CMOS low-noise amplifier for 60 GHz WPAN system and 77 GHz automobile radar system

Lin

Lee

2015

Microw. Opt. Technol. Lett.

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A low‐power and wideband two‐stage millimeter‐wave low‐noise amplifier (LNA) for 60 GHz wireless personal area network system and 77 GHz automotive radar system using standard 90 nm CMOS technology is reported. T‐match technique is used to achieve simultaneously wideband input and output impedance matching, wideband power gain (S21), and wideband noise figure (NF). The LNA consumes 9.99 mW, achieving S11 better than −−10 dB for frequencies of 57.6–81.8 GHz, and S12 better than −−29.1 dB for frequencies of 10–110 GHz. Additionally, high and flat S21 of 11.2 ± 1.5 dB is achieved for frequencies of 57.9–80.4 GHz, which means the corresponding 3‐dB bandwidth is 22.5 GHz. Furthermore, the LNA achieves minimum NF of 4.8 dB at 76 GHz and NF of 6.2 ± 1.4 dB for frequencies of 76–84 GHz, one of the best NF results ever reported for a CMOS or SiGe BiCMOS LNA with operation frequency around 77 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:594–600, 2015

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Section: Measurement Results and Discussionmentioning

confidence: 98%

Section: Measurement Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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9.99 mW 4.8 dB NF 57-81 GHz CMOS low-noise amplifier for 60 GHz WPAN system and 77 GHz automobile radar system

Lin

Lee

2015

Microw. Opt. Technol. Lett.

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“…In most previous work, the cutoff frequency (i.e., technology cost), f T , of the transistors used is not reported. Therefore, if f T is neglected, a figure of merit (FOM) suitable for evaluating the performance of wideband LNAs can be defined as below :

FOM [GHz / mW] = \frac{S_{21} [1] \cdot BW [GHz]}{(NF - 1) [1] \cdot P_{DC} [mW]},

where S 21 represents the average power gain in magnitude; BW [GHz] represents the 3‐dB‐bandwidth in GHz; (NF − 1) represents the excess NF in magnitude; and P DC [mW] represents power dissipation in mW. This FOM includes the most relevant parameters for evaluating LNAs for low‐power, high‐gain, low‐noise, and wideband applications.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

“…Recently, several excellent W‐band CMOS/BiCMOS LNAs have been reported . For example, in , a single cascode stage 77–81 GHz LNA in 0.13‐µm SiGe HBT process with currentgain cutoff frequency/maximum oscillation frequency ( f T / f max ) of 230/280 GHz was demonstrated. Though low P DC of 9 mW was achieved, its S 21 of 8.5 ± 1.5 dB and simulated NF of 7.2 dB (at 82 GHz) were not satisfactory.…”

Section: Introductionmentioning

confidence: 99%

A high‐performance low‐noise amplifier for 71–76, 76–77, and 77–81 GHz communication systems in 90‐NM CMOS

Lin

Wang

Lee

et al. 2014

Micro & Optical Tech Letters

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A low power and wideband three‐stage millimeter‐wave low‐noise amplifier (LNA) for 71–76 GHz high‐speed point‐to‐point wireless link, and 76–77 GHz long‐range and 77–81 GHz short‐range automotive radars using standard 90‐nm CMOS technology is reported. T‐match technique is utilized to achieve simultaneously wideband input and output impedance matching, wideband power gain (S21) and wideband noise figure (NF) at W‐band. The LNA consumes 21.1 mW, achieving S11 better than −10 dB for frequencies 62.3–82.4 GHz, S22 better than −10 dB for frequencies 62.8–84.6 GHz, S12 better than −29 dB for frequencies 72–84 GHz, and group delay variation smaller than ±6.5 ps for frequencies 70–90 GHz. Additionally, high and flat S21 of 13.1 ± 1.5 dB is achieved for frequencies 72–84 GHz, which means the corresponding 3‐dB bandwidth is 12 GHz. Furthermore, the LNA achieves minimum NF of 6.2 dB at 78 GHz and NF of 6.8 ± 0.6 dB for frequencies 75–82 GHz, one of the best NF results ever reported for a W‐band CMOS LNA. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1673–1680, 2014

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