Migration behaviour of selenium implanted into polycrystalline 3C–SiC

Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC

“…To the best of our knowledge, not much has been done on the migration of Se in SiC. Only the migration of Se implanted into polycrystalline SiC has been investigated at temperatures ≥ 1000 o C [10]. To get more insight in the migration of this fission product, the effect of radiation damage in the migration of Se need to be investigated.…”

Impact of microbial processes on the safety of deep geological repositories for radioactive waste

“…Selenium is a common component of the spent nuclear fuel present mainly as 79 Se isotope (half-life 3.27 × 10 5 years; Hassan et al, 2021 ). Although other Se isotopes such as 75 Se (half-life 120 days) or 80 Se (stable isotope) can be found in radioactive residues, only 79 Se present in high-level radioactive waste is radiotoxic enough (betta particle emitter) to compromise long-term security ( Abdalla et al, 2020 ). This element can exist in nature in different oxidation states: +VI, +IV, 0, and –II.…”

Isothermal annealing of selenium (Se)-implanted silicon carbide: Structural evolution and migration behavior of implanted Se

“…These studies resulted in numerous publications that have reviewed the diffusion of important fission products in SiC such as silver, cesium, xenon, krypton, iodine, and strontium [4,[6][7][8][9][10]. 79 Se is one of the hazardous fission products that is found in high-level radioactive waste created by the reprocessing of spent nuclear fuel from the operation of nuclear reactors, as well as in spent fuel reprocessing facilities [11]. It is a β-emitter, and the unacceptable risks posed by the presence of Se is the increased likelihood of inducing cancer [12].…”

“…79 Se is one of the hazardous fission products that is found in high-level radioactive waste created by the reprocessing of spent nuclear fuel from the operation of nuclear reactors, as well as in spent fuel reprocessing facilities [11]. It is a β-emitter, and the unacceptable risks posed by the presence of Se is the increased likelihood of inducing cancer [12]. Therefore, its migration in SiC need to be investigated.…”

“…Quite recently the migration behavior of Se in SiC was investigated. The substrate temperature during ion implantation was (RT) [11] and higher temperatures of 350 and 600 o C [12] was investigated. In these previous studies the implanted samples were sequentially annealed from 1000 o C to 1500 o C in steps of 100 o C for 10 hour.…”