Mie Resonances, Infrared Emission, and the Band Gap of InN

Shubina, T. V.; Иванов, С. В.; Jmerik, V. N.; Solnyshkov, D. D.; Vekshin, V. A.; Kop’ev, P. S.; Vasson, A.; Leymarie, J.; Kavokin, A. V.; Amano, Hiroshi; Shimono, Kazuaki; Kasic, A.; Ḿonemar, B.

doi:10.1103/physrevlett.92.117407

Cited by 193 publications

(49 citation statements)

References 26 publications

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“…Other approaches such as the analysis of emission enhancement must be considered only as supporting. The accelerated dynamics has been previously observed by time-resolved photoluminescence ͑PL͒ spectroscopy in several metal-semiconductor structures, 5,6,11,13,14 but not in the nanocomposites with buried MNPs, although the emission enhancement near MNPs in InN epilayers 7,15 was suggestive of this effect.…”

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confidence: 75%

Plasmon-induced Purcell effect in InN/In metal-semiconductor nanocomposites

et al. 2010

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The Purcell effect, acceleration of a spontaneous emission recombination rate, has been observed in InN/In nanocomposites with buried nanoparticles of metallic In. This effect, associated with localized plasmons, is characterized by the averaged Purcell factor as high as 30-40 in the structures with large enough particles. This high value is indicative of a noticeable contribution from the emitting dipoles polarized normally to the nanoparticle surface in this system. The experimental observation of shortening of the emission lifetimes with increasing the amount of In is supported by calculations performed in a semiclassical approximation

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Plasmon-induced Purcell effect in InN/In metal-semiconductor nanocomposites

et al. 2010

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“…Indium nitride, like its lighter homologues, is an intriguing semiconducting material. Although, up to know research efforts are hindered by indium metal incorporations in as-grown InN, produced by decomposition of the thermodynamic instable InN, especially at temperatures above 723 K [204]. Similar structural defects provoked by formation of In particles are encountered in In x Ga 1−x N solid solutions (0 ≤ x ≤ 0.5) [205], which are currently used in light-emitting and laser diodes.…”

Section: Group III and Iv Nitridesmentioning

confidence: 99%

Chemistry of Ammonothermal Synthesis

2014

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Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large range of chemically different materials, such as nitrides (e.g., GaN, AlN), amides (e.g., LiNH 2 , Zn(NH 2 ) 2 ), imides (e.g., Th(NH) 2 ), ammoniates (e.g., Ga(NH 3 ) 3 F 3 , [Al(NH 3 ) 6 ]I 3 · NH 3 ) and non-nitrogen compounds like hydroxides, hydrogen sulfides and polychalcogenides (e.g., NaOH, LiHS, CaS, Cs 2 Te 5 ). In particular, large scale production of high quality crystals is possible, due to comparatively simple scalability of the experimental set-up. The ammonothermal method is defined as employing a heterogeneous reaction in ammonia as one homogenous fluid close to or in supercritical state. Three types of milieus may be applied during ammonothermal synthesis: ammonobasic, ammononeutral or ammonoacidic, evoked by the used starting materials and mineralizers, strongly influencing the obtained products. There is little known about the dissolution and materials transport processes or the deposition mechanisms during ammonothermal crystal growth. However, the initial results indicate the possible nature of different intermediate species present in the respective milieus. A Alkali or alkaline-earth metal, A(1) = alkali metal, A(2) = alkaline-earth metal B Further metal, might be main group metal, transition or rare-earth metal M Transition metal, excluding Sc, Y, La R Rare-earth metal, Sc, Y, La-Lu X Halide E Other main group element

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“…There have been also a number of reports which argue for the bandgap values in the range from 1.2 to 1.5 eV [8,9]. It should be noted however that all InN and In-rich InGaN films are n-type as grown, with electron concentrations ranging from mid 10 17 to high 10 20 cm -3 .…”

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