Fermi-level stabilization energy in group III nitrides

Li, S. X.; Yu, K. M.; Wu, Junqiao; Jones, R. E.; Walukiewicz, W.; Ager, Joel W.; Shan, W.; Häller, E. E.; Lu, Hai; Schaff, William J.

doi:10.1103/physrevb.71.161201

Cited by 199 publications

(111 citation statements)

References 22 publications

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“…In an otherwise bulk p-type InN sample, as in the case shown in Fig. 2b, similar, highly degenerate n-type inversion layers are expected on the surface as well as at the InN/substrate or InN/buffer-layer interface [3][4][5][6][7][8]. Because these layers are degenerate (n ∼ 10 In contrast, the samples with more Mg (e.g.…”

Section: Electrical and Thermoelectric Measurements A Resultsmentioning

confidence: 90%

“…InN has a very large electron affinity, and undoped InN films persistently exhibit n-type conductivity and a metallic surface accumulation layer due to pinning of the Fermi level above the conduction band edge [3][4][5][6][7][8]. Mg has been used as a p-type dopant, but the surface pinning in this case creates an n-type surface inversion layer which complicates Hall effect measurements and prevents direct electrical contact to any p-type material below.…”

Section: Introductionmentioning

confidence: 99%

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Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a "window" from ca. 3 × 10 17 to 1 × 10 19 cm −3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coefficient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ∼70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge. * Corresponding author: JWAger@lbl.gov

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Section: Electrical and Thermoelectric Measurements A Resultsmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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“…Rather, it appears that the variation is caused by the variation of the sample quality. It was also found that the donor level is located at a higher energy level than the conduction band minimum; 19,20) thus, the ionized donors are thought to act as carrier-scattering centers even at low temperatures. In Sect.…”

Section: Introductionmentioning

confidence: 99%

Carrier dynamics and related electronic band properties of InN films

Ishitani

2014

Jpn. J. Appl. Phys.

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In the present article, we focus our discussion on the carrier dynamics of the scattering and recombination processes of InN films and the related band-edge energy structure. Various reports on this matter are summarized and some issues are reexamined. The analysis result based on the apparent band-band transition matrix element is consistent with a reported effective heavy hole mass of 0.59 (+0.06) m 0 . An E p value related to the transition matrix element of 10-14 eV is thought to be plausible. The ambiguity of the band-edge structure is evaluated by the uncertainty of electron density. The distortion of the conduction band bottom and the ambiguity of the estimation of the many-body effect are discussed. The enhancement of the anisotropic electron-scattering nature with the decrease in residual electron density reveals that the residual electron source has isotropic potentials: point defects or small complexes. Infrared reflectance spectrum analysis reveals the high electron mobility inside grains in spite of the scattering by edge-type dislocations which cause the anisotropic carrier scattering. The recombination processes at low temperatures are dominated by nonradiative processes related to edge-type dislocations, while the thermally activated nonradiative recombination process is independent of the dislocation density. The activation processes and energies of the recombination related to phonon localization are characterized. InN is a peculiar material that has high carrier mobility and a strong electron-phonon interaction, which possibly induces the high nonradiative carrier recombination rate. The control of phonon localization is thus required.

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“…32,33 These states emit their electrons into the conduction band and acquire positive charges, which are then compensated by an accumulation of electrons close to the surface. This view is in agreement with our result here if the origin of the surface states are taken into consideration.…”

Section: àAmentioning

confidence: 99%

Optical Hall Effect in Hexagonal InN

Hofmann

Darakchieva

Ḿonemar

et al. 2008

Journal of Elec Materi

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Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with powerlaw dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the C-point effective mass.

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Fermi-level stabilization energy in group III nitrides

Abstract: Energetic particle irradiation is used to systematically introduce point defects intoIn 1-x Ga x N alloys over the entire composition range.

Cited by 199 publications

References 22 publications

Hole transport and photoluminescence in Mg-doped InN

Hole transport and photoluminescence in Mg-doped InN

Carrier dynamics and related electronic band properties of InN films

Optical Hall Effect in Hexagonal InN

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