2010
DOI: 10.1021/jp9114139
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Midinfrared Index Sensing of pL-Scale Analytes Based on Surface Phonon Polaritons in Silicon Carbide

Abstract: We present the first demonstration of pL-scale analyte index sensing based on surface phonon polaritons in the midinfrared, which are excited at the silicon carbide/analyte interface in the Otto configuration. Attenuated total reflectance measurements reveal analyte index specificity through a double-scan of wavelength and incidence angle for analyte volumes as small as 100 pL. Midinfrared sensing tuned to surface phonon polariton resonance paves the way for index sensing of analytes beyond current volume-reso… Show more

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Cited by 47 publications
(50 citation statements)
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References 14 publications
(40 reference statements)
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“…Mode (i) appears clearly in the GaN Reststrahlen band. Mode (ii) is as a red-shifted SiC SPhP, the magnitude of redshifting increasing with increasing GaN layer thickness (not shown), which can be interpreted as index-shifting of the SiC SPhP by the GaN layer 35 . Mode (iii) surprisingly emerges at the upper edge of the SiC high-reflectivity band at ∼ 1000 cm −1 , i.e., outside the spectral region supporting SPhPs, and likely corresponds to a waveguiding mode at small positive ε SiC and large ε GaN at this frequency.…”
Section: B Gan / 6h-sicmentioning
confidence: 99%
See 1 more Smart Citation
“…Mode (i) appears clearly in the GaN Reststrahlen band. Mode (ii) is as a red-shifted SiC SPhP, the magnitude of redshifting increasing with increasing GaN layer thickness (not shown), which can be interpreted as index-shifting of the SiC SPhP by the GaN layer 35 . Mode (iii) surprisingly emerges at the upper edge of the SiC high-reflectivity band at ∼ 1000 cm −1 , i.e., outside the spectral region supporting SPhPs, and likely corresponds to a waveguiding mode at small positive ε SiC and large ε GaN at this frequency.…”
Section: B Gan / 6h-sicmentioning
confidence: 99%
“…In addition to reflection and transmission coefficients, we also calculate the full electric field distributions throughout the heterostructure, which is particularly useful for analysis of polariton modes and their associated local field enhancements. To demonstrate the capabilities of our algorithm, we present simulation results for several model systems where SPhPs can be excited using prism coupling in the Otto geometry 20 : 6H-SiC, GaN/SiC, SiC/GaN/SiC, and α-quartz, covering a number of phenomena such as critical coupling to SPhPs 21,22 , index-sensing 35 , modesplitting 36 , wave-guiding 37 , and polaritons in hyperbolic media 29,32 .…”
Section: Introductionmentioning
confidence: 99%
“…Promising results by Anderson [125] support this claim. Further, an IR analog of surface plasmon resonance (SPR) biosensing was recently demonstrated by Neuner et al [174] whereby changes in the local index of refraction on a SiC surface were detected by attenuated total reflection (ATR), and they enable detection of pL quantities of analytes ( Figure 12A). In addition, the coincidence of the Reststrahlen band of hBN, c-BN, SiC, SiO 2 , Al 2 O 3 and many III-N materials with the vibrational modes of a wide array of molecular species and with an atmospheric transmission window leads to the potential for a wide array of applications.…”
Section: Realizing Mid-ir To Thz Nanophotonics and Metamaterials: Brimentioning
confidence: 99%
“…To discuss the implications for index-based sensing, 45 Whilst this simulation suggests that hBN can act as a surface sensor, it is instructive to benchmark against other index-based sensing schemes. In the Supporting Information (Figures S8 and S9) we compare a hBN film against a notional isotropic SPhP material operating with the same TO, LO and damping frequencies.…”
mentioning
confidence: 99%