Middle-frequency magnetron sputtering for GaN growth

Yin, M.L.; Zou, Changwei; Li, M.; Liu, C.S.; Guo, Liping; Fu, Dejun

doi:10.1016/j.nimb.2007.05.034

Cited by 17 publications

(5 citation statements)

References 8 publications

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“…The crystal structure of the GaN:O film is influenced by the substrate structure, with the same c-plane orientation. The possible explanation for the obtained GaN:O crystal structure may be the features of magnetron sputtering itself, i.e., the energies of the sputtered atoms of a few eV [ 25 ], relatively high target-substrate distance during the process (12 cm) and sputtering from a high purity crystalline target [ 26 ]. The high kinetic energy of the sputtered atoms results in high atomic mobility on the substrate, which resulted in an increase in the mean free path and ultimately enhanced the nucleation and crystallization of the film.…”

Section: Resultsmentioning

confidence: 99%

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

et al. 2023

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One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective intentional oxygen doping of sputtered GaN films to obtain highly conductive n+-GaN:O films. We have developed a novel and simple method to obtain these films. The method is based on the room temperature magnetron sputtering of a single crystal bulk GaN target doped with oxygen. The n+-GaN:O films exhibit a polycrystalline structure with a crack-free surface and a free electron concentration of 7.4 × 1018 cm3. Ohmic contact to GaN:Si with n+-GaN:O sub-contact layer achieves specific contact resistance of the order of 10−5 Ωcm2 after thermal treatment. The obtained results are very promising for the development of the technology of a whole new class of ohmic contacts to n-GaN.

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Section: Resultsmentioning

confidence: 99%

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

et al. 2023

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“…[5,6]. Pure Ga (99.99%) was put into the twin magnetron targets, which were 3 mm in depth and back-cooled by refrigerated water maintained at a temperature of 5 1C.…”

Section: Methodsmentioning

confidence: 99%

Preparation of GaN films on glass substrates by middle frequency magnetron sputtering

Zou

Wang

Yin

et al. 2009

Journal of Crystal Growth

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“…GaN films were deposited using a middle-frequency magnetron sputtering system operating at 40 kHz [15] and the experimental details have been shown in Ref. [16].…”

Section: Methodsmentioning

confidence: 99%

“…MF magnetron sputtering is a technique that effectively eliminates poisoning of targets and therefore is possible to produce films with very high growth rate. Previously we have deposited AlN, Ti-containing amorphous carbon nanocomposite coatings, and GaN films on Si (111) substrates by this method [13][14][15][16]. In the present work, we report on the deposition of GaN films by middle-frequency magnetron sputtering on glass substrate and their crystallization properties depending on total gas pressure.…”

Section: Introductionmentioning

confidence: 92%