Preparation of GaN films on glass substrates by middle frequency magnetron sputtering

Hussain

et al. 2014

ISRN Materials Science

Polycrystalline gallium nitride films were successfully deposited on fused silica substrates by ablating a GaN target using pulsed Nd-YAG laser. Microstructural studies indicated an increase in the average crystallite size from ~8 nm to ~70 nm with the increase in substrate temperature from 300 K to 873 K during deposition. The films deposited here were nearly stoichiometric. XPS studies indicated two strong peaks located at ~1116.6 eV and ~395 eV for Ga2p3/2 and a N1s core-level peak, respectively. The films deposited at substrate temperature above 573 K are predominantly zinc blende in nature. PL spectra of the films deposited at higher temperatures were dominated by a strong peak at ~3.2 eV. FTIR spectra indicated a strong and broad absorption peak centered ~520 cm−1 with two shoulders at ~570 cm−1 and 584 cm−1. Characteristic Raman peak at ~531 cm−1 for the A1(TO) mode is observed for all the films. Grain boundary trap states varied between 3.1×1015 and 7×1015 m−2, while barrier height at the grain boundaries varied between 12.4 meV and 37.14 meV. Stress in the films decreased with the increase in substrate temperature.

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique

Hussain

et al. 2014

ISRN Materials Science

“…46,47 The latest growth technologies have demonstrated their capacity for mass producing GaN wafers (> 12 inches) with high throughput, low fabrication costs, and the ability to grow films not only on monocrystalline substrates but also on non-crystalline substrates such as glass and flexible polymer substrates. [48][49][50] Compared to existing commercialized cathode structures, the price of GaN/substrate is competitive and is likely to decrease with further adoption (Table S2).…”

Section: Toc Graphicsmentioning

confidence: 99%

Nanoporous GaN/n-type GaN: A Cathode Structure for ITO-Free Perovskite Solar Cells

Lee¹,

Min²,

Türedi³

et al. 2020

ACS Energy Lett.

“…To address these issues and fabricate low-cost GaN-based optoelectronic devices, the need to develop new growth methods of GaN films with a low fabrication cost and high throughput is urgent. Magnetron sputtering has recently been studied for high-quality GaN thin-film deposition on glass substrates at low growth temperatures [11]. The advantages of using magnetron sputtering to deposit GaN thin films on glass substrates include large-scale fabrication with uniform thin-film thickness at a high deposition rate and a low deposition temperature.…”

Section: Introductionmentioning

confidence: 99%

Properties of N-Type GaN Thin Film with Si-Ti Codoping on a Glass Substrate

et al. 2020

In this study, n-type gallium nitride (GaN) films were fabricated by a silicon–titanium (Si-Ti) codoping sputtering technique with a zinc oxide (ZnO) buffer layer on amorphous glass substrates with different post-growth annealing temperatures for optimizing the GaN crystal quality. Si-Ti-codoped n-type GaN films that were thermally annealed at 400 °C had a low thin-film resistivity of 2.6 × 10−1 Ω-cm and a high electron concentration of 6.65 × 1019 cm−3, as determined through Hall measurement. X-ray diffraction (XRD) results revealed a high (002) XRD intensity with a narrow spectral line and a full width at half maximum (FWHM) value that indicated the superior crystal growth of a hexagonal structure of the GaN thin films. In addition, photoluminescence measurement results demonstrated a near-band-edge emission at 365 nm, indicating the crystal growth of GaN thin films on glass substrates. The Burstein–Moss effect was observed in the Tauc plot results, indicating that the Fermi level inside the conduction band moves upward and thus improves the n-type properties of the GaN thin film. X-ray photoelectron spectroscopy measurement results revealed that all atoms doped into the GaN film are present and that both Si and Ti atoms bond with N atoms.