Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

“…Current MCT growth technology fabricates n-type materials with concentration of deep centres much lower than that achievable for p-type MCT. As a result, dark currents turn out to be smaller for p + -n photodiodes than those for n + -p structures, and this allows for the increase in the device operating temperature [5][6][7][8]. For planar MCT technology, ion implantation is the most commonly used method for the fabrication of p-n junctions, and the impurity most widely used for the formation of the p + -region is arsenic.…”

Applying 2DEG in High‐Performance Mid‐Infrared Photodetection

“…The corner frequency f 0 of our detector is determined to be ≈100 Hz, which is orders of magnitude smaller than those of detectors made from 2D layered materials such as high‐mobility graphene (>5000 Hz) [ 45 ] or conventional MIR HgCdTe pin detectors. [ 48,49 ] The obtained time constant τ associated with trapping states is ≈734 µs for 20 Hz < f < 100 Hz where the g–r noise dominates. The larger τ is, the less is the influence of the g–r noise exerting on the low frequency noise, which leads to a lower corner frequency f 0 .…”

“…The corner frequency f 0 of our detector is determined to be ≈100 Hz, which is orders of magnitude smaller than those of detectors made from 2D layered materials such as highmobility graphene (>5000 Hz) [45] or conventional MIR HgCdTe pin detectors. [48,49] The obtained time constant 𝜏 associated with trapping states is ≈734 μs for 20 Hz < f < 100 Hz where the g-r noise dominates. The larger 𝜏 is, the less is the influence of the gr noise exerting on the low frequency noise, which leads to a lower for the black phosphorus photoconductive detector proposed by Kim et al, [27] for the black phosphorus photoconductive detector proposed by Amani et al, [28] for the black arsenic phosphorus photoconductive detector, [28] for the black arsenic phosphorus/MoS 2 heterostructure, [25] for the PtTe 2 /Si heterostructure, [21] for the WS 2 /AlO x /Ge heterostructure, [23] for the Bi 2 Se 3 /graphene heterostructure, [34] and for the black arsenic phosphorus FET, [25] respectively.…”

Performance of Hg1−xCdxTe infrared focal plane array at elevated temperature

“…High operation temperature of infrared detectors is advantageous in terms of reduced electrical power, smaller size/weight and increased lifetime of thermal imaging systems. Several device architectures like non-equilibrium mode of operation nBn and pBp have been reported to increase the operation temperature of HgCdTe based IR detectors [1][2][3][4][5][6][7][8][9][10]. Non-equilibrium operation of a HgCdTe diode for high operating temperature is fraught with higher noise at required high bias thus limiting their use in the large format fine pitch focal plane arrays.…”