Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Sun, Haibin; Liu, Xiaolong; Zhao, Li; Jia, Jianxin; Jiang, Changhui; Xiao, Jiamin; Chen, Yuwei; Xu, Long; Duan, Zhiyong; rao, peng; Sun, Shoujin

doi:10.1364/oe.446283

Cited by 8 publications

(4 citation statements)

References 39 publications

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“…Nanosecond (ns) and femtosecond (fs) laser doping have emerged as effective methods to dope a range of impurities into crystalline semiconductors with the ability to increase the dopant concentrations to greatly exceed their solubility . Hyperdoped Si can be obtained through irradiating Si wafers with fs or ns laser pulses in the presence of dopants on surface, which are typically gases or thin films [39,40] .…”

Section: Laser Dopingmentioning

confidence: 99%

Hyperdoped silicon: Processing, properties, and devices

Tong¹,

Bu²,

Zhang³

et al. 2022

J. Semicond.

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Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attracting great interest since the tuning of semiconductor properties increasingly relies on extreme measures. In this review we focus on hyperdoped silicon (Si) by introducing methods used for the hyperdoping of Si such as ion implantation and laser doping, discussing the electrical and optical properties of hyperdoped bulk Si, Si nanocrystals, Si nanowires and Si films, and presenting the use of hyperdoped Si for devices like infrared photodetectors and solar cells. The perspectives of the development of hyperdoped Si are also provided.

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Section: Laser Dopingmentioning

confidence: 99%

Hyperdoped silicon: Processing, properties, and devices

Tong¹,

Bu²,

Zhang³

et al. 2022

J. Semicond.

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“…Silicon (Si) is regarded as one of the most crucial semiconductor materials, serving as the cornerstone for contemporary microelectronics manufacturing [1]. Compared with other semiconductor materials, Si holds considerable advantages, such as abundant natural content, easy production, high carrier mobility, easy formation of natural oxides as insulating layer interfaces, and high compatibility with the complementary metal-oxide-semiconductor technology [2,3]. These abundant advantages endow crystalline Si numerous applications * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

High infrared responsivity of silicon photodetector with titanium-hyperdoping

Yang

et al. 2023

Semicond. Sci. Technol.

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Silicon (Si) photodetectors have advantages of low cost, convenient preparation, and high integration. However, limited by the indirect bandgap of 1.12 eV, Si photodetectors cannot perform at the wavelength beyond 1100 nm. It is attractive to extend the response wavelength of Si-based photodetectors for the optoelectronics application in recent years. In this article, we have successfully prepared a high-performance photoconductive detector based on titanium-hyperdoped Si (Si:Ti). The Si:Ti material shows an enhanced infrared absorption primarily attributed to the sub-bandgap photo excitation assisted by titanium (Ti)-induced energy states with an average energy level of Ev + 0.23 eV. Moreover, the detector exhibits a high responsivity of 200 mA·W-1 under 1550nm light at 5 V bias, which is higher than previously reported transition metals hyperdoped silicon detectors. These results are helpful for the development of infrared hyperdoped silicon photodetectors in the field of optoelectronics.

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“…Al film was sputter-deposited evenly on the black silicon surface. Finally, we obtained photodiodes with different black silicon surface morphologies after annealing [10,11] .…”

Section: Introductionmentioning

confidence: 99%

Photoelectric characteristics of different micro structures of black silicon etched by femtosecond laser

Zhang

Zhu

Liu

et al. 2023

Ninth Symposium on Novel Photoelectronic Detection Technology and Applications

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Black silicon, which is characterized as numerous nanospikes induced on bulk silicon, has recently attracted great attention due to its fascinating photoelectric property. Compared with the traditional silicon-based photoelectric sensor, photoelectric sensors based on the black silicon doped with supersaturated chalcogens have shown both excellent photoelectric corresponding efficiency in the visible range and considerable optical absorption efficiency in the near infrared band due to the impurity energy-level introduced by the chalcogens element supersaturated doping. Nonetheless, the differences of surface morphology greatly affect the photoelectric efficiency of black silicon photoelectric sensors, which is quite difficult to control in practice. As one of the mainstream methods in black silicon fabrication, femtosecond laser etching exhibits the ability in manipulate different dimensionality and configurations and provide a clear and flexible research platform. Black silicon can be etched on traditional silicon-based photoelectric sensor with different size of surface morphology according to the size of surface thickness. In this work, by varying the etching energy density of the femtosecond laser, three kinds of black silicon samples with different surface morphology were obtained. At the same time, the surface morphology, size, visible-infrared absorptivity and photoelectric conversion efficiency of black silicon were characterized by scanning electron microscope, spectrophotometer and confocal Raman spectroscopy, etc. We got three sample characterization data, the minimum morphology depth of black silicon can be controlled at 2μm, the maximum visible light absorption efficiency can reach 90%, and the near-infrared absorption efficiency can reach 60% before annealing. Naturally, the photoelectric conversion efficiency has been proven to be significantly improved. Based on the observation of experimental results, it is an important step to understand the photoelectric characteristic of black silicon with different morphologies, which is the application of black silicon in different fields.

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Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Cited by 8 publications

References 39 publications

Hyperdoped silicon: Processing, properties, and devices

Hyperdoped silicon: Processing, properties, and devices

High infrared responsivity of silicon photodetector with titanium-hyperdoping

Photoelectric characteristics of different micro structures of black silicon etched by femtosecond laser

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