2002
DOI: 10.1109/jqe.2002.1005406
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Mid-infrared type-II interband cascade lasers

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Cited by 69 publications
(34 citation statements)
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“…Recently, the quantum cascade laser (QCL) 122,123 and the interband cascade laser, 124,125 wavelength-flexible, compact, and semiconductor-based light sources have emerged as commercially viable sources of coherent light across the mid-IR. At the same time, the renewed interest in mid-IR photonics, driven in large part by the QCL, is motivating efforts to develop improved and novel semiconductor-based IR photodetectors.…”
Section: Discussionmentioning
confidence: 99%
“…Recently, the quantum cascade laser (QCL) 122,123 and the interband cascade laser, 124,125 wavelength-flexible, compact, and semiconductor-based light sources have emerged as commercially viable sources of coherent light across the mid-IR. At the same time, the renewed interest in mid-IR photonics, driven in large part by the QCL, is motivating efforts to develop improved and novel semiconductor-based IR photodetectors.…”
Section: Discussionmentioning
confidence: 99%
“…These lasers relied on direct band-to-band transitions in bulk material or analogous transition in type I quantum wells. Since the mid 1990s, lead salt and antimonide lasers have been facing competition from the quantum-cascade lasers (QCLs) [38] and type II quantum-well lasers (interband cascade lasers -ICLs) [39]. Quantum-cascade lasers operate on transitions within the conduction subbands of multiple quantum wells and have been pioneered by Bell Laboratories.…”
Section: Ir Gas Sensorsmentioning
confidence: 99%
“…Since this type of laser combines the advantages of quantum cascade (QC) lasers [2] and type-II quantum well interband lasers, type-II IC lasers were projected by simulations [3,4] to operate in continuous wave (cw) mode up to room temperature with high output power. While significant advances toward such a high-performance level have been reported [5][6][7][8][9], the optimization of the growth and fabrication parameters for these new devices is an ongoing effort. The growth by molecular beam epitaxy (MBE) of these laser structures can take over 20 h to complete, with over 8 mm of strained superlattice and multi-QW material comprising the epitaxial layer.…”
Section: Introductionmentioning
confidence: 99%