Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy

Yasuda, Arata; Suto, Kén; Takahashi, Yatsuhiro; Nishizawa, Jun–ichi

doi:10.1016/j.infrared.2014.10.002

Cited by 10 publications

(3 citation statements)

References 12 publications

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“…Before the invention of quantum cascade lasers, IV-VI materials were the only choice for manufacturing medium wave infrared laser diodes, which are still of great significance today. It is considered an ideal mid-infrared material and has been widely studied [5][6][7][8][9][10][11][12][13][14][15][16][17]. Under the influence of quantum effect, nano PbTe materials show better properties than bulk materials, which makes the research of PbTe nano materials attract much attention.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical epitaxial PbTe nanowires photodetector for NIR response

Z¹,

Zhang²,

Yan³

et al. 2022

Nanotechnology

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Lead telluride nanowires deposited by electrochemical atomic layers have broad application prospects in the field of photodetectors. In this work, using the method of electrochemical atomic layer deposition, we obtained different morphologies of lead telluride materials by controlling the deposition parameters, such as deposition time, temperature, and potential, and characterized them using SEM, TEM, XPS, and other techniques. A lead telluride nanowire detector with good performance was prepared. The photoresponsivity of the detector is 102 mA/W, the detectivity is 2.1x108 jones, and the response time and recovery time are 0.52s and 0.54s respectively at 2.7 μm wavelength laser irradiation.

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Section: Introductionmentioning

confidence: 99%

Electrochemical epitaxial PbTe nanowires photodetector for NIR response

Z¹,

Zhang²,

Yan³

et al. 2022

Nanotechnology

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“…Lead telluride (PbTe), a narrow-bandgap semiconductor with an energy gap E g varying from 190 meV at T = 0 K to 319 meV at room temperature, is commonly applied in devices for the IR spectral region [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 ]. During WWII, lead chalcogenides (PbS, PbSe and PbTe) found military applications for the detection of the infrared part of the spectra [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline PbTe:In Films on Amorphous Substrate: Structure and Physical Properties

Kovalyuk¹,

Sheveleva²,

Auslender³

et al. 2022

Materials

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Polycrystalline PbTe:In films on a polyimide substrate were obtained and investigated. Their structural and transport properties in a wide range of temperatures (10–300 K) were studied. The unique feature of In impurity in PbTe is the stabilization of the Fermi level (pinning effect) that allowed for the preparation polycrystalline films with the same carrier concentration. We found that heat treatment in an argon atmosphere does not change the average grain size and carrier concentration for as-grown films but greatly increases the Hall mobility and the electron mean free path. By comparing the mobility in the bulk and in the film after heat treatment, we extracted the value of the mobility that arises due to scattering at the grain boundary barriers. The ultimate goal of the present study is the development of these films in designing portable uncooled photodetectors for the mid-IR range.

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“…Photodiode infrared sensors can be either of the Schottky barrier [ 7 ] or of the p-n junction type. PbTe photodiodes are usually made from layers grown on BaF 2 substrates [ 8 ] or on Si substrates using fluoride buffer layers [ 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

Two-Color Infrared Sensor on the PbTe: In p-n Junction

Gradauskas

Dzundza

Chernyak

et al. 2021

Sensors

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A lead telluride sensor was fabricated on the base of a p-n PbTe junction created on a PbTe single crystal grown by the Czochralski technique, followed by the diffusion of an indium donor impurity into a crystal. The capacitance-voltage and current-voltage characteristics of the sensor were measured over the temperature range from 80 K to 150 K. A prototype of a high-temperature mid-IR sensor, a PbTe diode, with a cut-off wavelength of 4 μm, operating at temperatures up to 150 K, was demonstrated for the first time. The advantage of the sensor is that its operating temperature is high enough to be reached by a solid-state thermoelectric cooler. The sensor showed a specific detectivity value of 1010 cm Hz1/2/W at a temperature of 150 K and a wavelength of 4.2 μm. The possibility to sense pulses of long-IR radiation by means of the PbTe diode was also demonstrated over the 100–180 K temperature range. For the first time, a two-photon absorption-caused photovoltaic effect was observed in PbTe at a wavelength of 9.5 μm at 150 K.

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Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy

Cited by 10 publications

References 12 publications

Electrochemical epitaxial PbTe nanowires photodetector for NIR response

Electrochemical epitaxial PbTe nanowires photodetector for NIR response

Polycrystalline PbTe:In Films on Amorphous Substrate: Structure and Physical Properties

Two-Color Infrared Sensor on the PbTe: In p-n Junction

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