Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

Jung, Daehwan; Lan, Yu; Wasserman, Daniel; Lee, Minjoo Larry

doi:10.1063/1.4935418

Cited by 12 publications

(5 citation statements)

References 32 publications

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“…37 Although grading GaAs x P 1-x buffers all the way to pure GaAs may increase the final TDD, yet, a combination of TCA and compositional step-grading scheme remains a promising approach to achieve a TDD of $1 Â 10 6 cm À2 . 45 In conclusion, we have presented the MBE growth of GaAs buffer layers on on-axis (001) GaP/Si substrates. ECCI measurements showed that the TDD in the optimized GaAs layer is 7.2 Â 10 6 cm À2 , which is a factor of $40 reduction compared with the unoptimized GaAs layer.…”

Section: Discussionmentioning

confidence: 93%

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Jung

Callahan

Shin

et al. 2017

Journal of Applied Physics

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106

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We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Various types of dislocation filter layers and growth temperatures of initial GaAs layer were investigated to reduce the threading dislocation densities in GaAs on GaP/Si. Electron channeling contrast imaging techniques revealed that an optimized GaAs buffer layer with thermal cycle annealing and InGaAs/GaAs dislocation filter layers has a threading dislocation density of 7.2 Â 10 6 cm À2 , which is a factor of 40 lower than an unoptimized GaAs buffer. The root-mean-square surface roughness was greatly decreased from 7.8 nm to 2.9 nm after the optimization process. A strong enhancement in photoluminescence intensity indicates that the optimized GaAs template grown on on-axis (001) GaP/Si substrates is a promising virtual substrate for Si-based optoelectronic devices.

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Section: Discussionmentioning

confidence: 93%

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Jung

Callahan

Shin

et al. 2017

Journal of Applied Physics

Self Cite

106

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“…Graded InAsP buffers grown by MBE have been studied as another platform for high-quality InAs type-I QWs by providing low threading dislocation densities of 2-4× 10 6 cm -2 and smooth surface morphology [103]. Furthermore, InAsP alloys on InP have a higher E g than InGaAs at the same lattice constant and thus offer more favorable carrier confinement in the QWs; Jung et al showed a barrier-emission-free EL peak from 2.5 μm to 3.0 μm at RT for InAs type-I QWs surrounded by InAs x P 1−x barriers with x=0.49-0.73 [108]. More recently, 2.75 μm RT lasing has been achieved in InAs/InAsP MQWs grown on InAs 0.5 P 0.5 multi-functional metamorphic buffers (MFMBs), as shown in figure 9 [107].…”

Section: Inp-based Type-i and Type-ii Emittersmentioning

confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

139

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The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum-and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential midinfrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in midinfrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transitionmetal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim to provide a survey of the current state of the art for mid-IR sources, but instead looks primarily to provide a picture of potential next-generation optical and optoelectronic materials systems for mid-IR light generation.

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“…In parallel, significant effort has been dedicated to extending the wavelength range accessible using InP-based devices [20]. This has involved the development of a variety of novel heterostructures, based on (i) type-II structures incorporating In x Ga 1−x (N)As/GaAs y Sb 1−y QWs (where pulsed-mode operation has been demonstrated out to 2.6 μm at 270 K) [21,22], or (ii) combining growth on Al x In 1−x As or InAs 1−x P x metamorphic buffer layers with highly-strained In x Ga 1−x As, InAs 1−x Sb x , GaSb 1−x Bi x or InAs 1−x Bi x type-I QWs (where pulsed-mode operation of a 2.9 μm device at 230 K has recently been demonstrated) [23][24][25][26][27][28][29]. Despite these ongoing innovations in heterostructure design and fabrication, pushing the emission wavelength of InP-based diode lasers beyond 3 μm remains a significant challenge.…”

Section: Introductionmentioning

confidence: 99%

Theory and design of In_xGa_1−xAs_1−yBi_ymid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3μm on InP substrates

Broderick

Xiong

Sweeney

et al. 2018

Semicond. Sci. Technol.

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We present a theoretical analysis and optimisation of the properties and performance of midinfrared semiconductor lasers based on the dilute bismide alloy InxGa1−xAs1−yBiy, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering. Our calculations demonstrate that structures based on compressively strained InxGa1−xAs1−yBiy quantum wells (QWs) can readily achieve emission wavelengths in the 3 -5 µm range, and that these QWs have large type-I band offsets. As such, these structures have the potential to overcome a number of limitations commonly associated with this application-rich but technologically challenging wavelength range. By considering structures having (i) fixed QW thickness and variable strain, and (ii) fixed strain and variable QW thickness, we quantify key trends in the properties and performance as functions of the alloy composition, structural properties, and emission wavelength, and on this basis identify routes towards the realisation of optimised devices for practical applications. Our analysis suggests that simple laser structures -incorporating InxGa1−xAs1−yBiy QWs and unstrained ternary In0.53Ga0.47As barriers -which are compatible with established epitaxial growth, provide a route to realising InP-based mid-infrared diode lasers.

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Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

Cited by 12 publications

References 32 publications

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Next-generation mid-infrared sources

Theory and design of In_xGa_1−xAs_1−yBi_ymid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3μm on InP substrates

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Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

Cited by 12 publications

References 32 publications

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Next-generation mid-infrared sources

Theory and design of InxGa1−xAs1−yBiymid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3μm on InP substrates

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Theory and design of In_xGa_1−xAs_1−yBi_ymid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3μm on InP substrates