2011
DOI: 10.1016/j.jcis.2011.07.090
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Microwave synthesis of BiPO4 nanostructures and their morphology-dependent photocatalytic performances

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Cited by 167 publications
(94 citation statements)
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“…As a crystalline semiconductor, the optical aborption near the band edge is based on the equation ĮhȞ=A(hȞ-Eg) 1/2 (where Į is the absorption coefficient, A is a constant, hȞ is the photo energy, and Eg is the bandgap energy). From the curve of the (ĮhȞ) 2 vs. photo energy (hȞ), the bandgap energy of the spindle-like BiPO 4 aggregates is estimated to be 3.46 eV, slightly lower than or similar to those of BiPO 4 materials reported previously [13][14][15][16][17][18][19][20].…”
Section: Characterization Of Bipo 4 Samplessupporting
confidence: 48%
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“…As a crystalline semiconductor, the optical aborption near the band edge is based on the equation ĮhȞ=A(hȞ-Eg) 1/2 (where Į is the absorption coefficient, A is a constant, hȞ is the photo energy, and Eg is the bandgap energy). From the curve of the (ĮhȞ) 2 vs. photo energy (hȞ), the bandgap energy of the spindle-like BiPO 4 aggregates is estimated to be 3.46 eV, slightly lower than or similar to those of BiPO 4 materials reported previously [13][14][15][16][17][18][19][20].…”
Section: Characterization Of Bipo 4 Samplessupporting
confidence: 48%
“…Based on the experimental results, the probable formation mechanism of the spindle-like BiPO 4 aggregates may be ascribed to an oriented aggregation process in our current experiment. First, Bi(NO 3 ) 3 could alcoholyze and hydrolyze in EG and water to form a bismuth oxide hydroxide nitrate complex which might be in the form of [Bi 6 O 5 (OH) 3 ](NO 3 ) 5 and then Bi 3+ was generated at a release speed by the dissociation of the complex [14,19]. Meanwhile, PO 4 3-ions were also provided by gradual dissociation of STPP in EG/water system.…”
Section: Characterization Of Bipo 4 Samplesmentioning
confidence: 99%
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“…In addition, n is determined by the type of optical transition of a semiconductor (n = 1 for a direct transition and n = 4 for an indirect transition). As BiPO 4 exhibits the characteristic of indirect band transition 26 , the value of n is 4. The corresponding Eg values of WBiPO 4 and GBiPO 4 were determined from a plot of (ahv) 2 versus energy (hv) ( Figure.…”
Section: From the Inset Ofmentioning
confidence: 99%