Microwave switch: LAMPS (light-activated microwave photoconductive switch)

Kaneko, Y.; Takenaka, T.; Low, T.S.; Kondoh, Yasufumi; Mars, D. E.; Cook, David J.; Saito, Masatoshi

doi:10.1049/el:20030607

Cited by 13 publications

(12 citation statements)

References 5 publications

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“…Currently, a heterostructure light activated microwave photoconductive switch design [1] with flip chip light source has a reported third order intercept (TOI) of 65dBm, extrapolated from measurements taken up to 1W. The heterostructure switch significantly differs from the silicon switch presented in this research as it comprises a complex 13 epilayer structure, involving a much more intricate set of manufacture processes.…”

Section: Review Of Switch Linearitymentioning

confidence: 94%

“…Linearity dictates the independence of device impedance from RF input signal power, and is typically monitored through second and third order harmonics. Linearity of photoconductive switches has not been widely reported beyond 1 W of incident RF power [1], and not been reported for an optically controlled switch made from a single semiconductor material. This study will report on the linearity of a photoconductive switch when exposed to 1W of incident RF power and the effect that light intensity of the controlling light source has on linearity.…”

mentioning

confidence: 99%

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Characterising the linearity of an optically controlled photoconductive microwave switch

Kowalczuk

Panagamuwa

Seager

et al. 2010

2010 Loughborough Antennas &Amp; Propagation Conference

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Section: Review Of Switch Linearitymentioning

confidence: 94%

mentioning

confidence: 99%

Characterising the linearity of an optically controlled photoconductive microwave switch

Kowalczuk

Panagamuwa

Seager

et al. 2010

2010 Loughborough Antennas &Amp; Propagation Conference

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“…In direct optical control of microwave devices and circuits, the optical signal induces generation of electron-hole pairs within a semiconductor material by photons absorption. Semiconductor conductivity inside the lightened region is then modified and allows to several millimeter and sub-millimeter applications [5,6]. This photo-induced conductivity is governed by drift-diffusion equations [7] and has a nonhomogenous shape in parallel and lateral directions of light propagation.…”

Section: Direct Optical Injectionmentioning

confidence: 99%

Optical generation of microwave signal for FMCW radar applications

Faci¹,

Tripon‐Canseliet²,

Benlarbi-Delaï³

et al. 2009

Micro & Optical Tech Letters

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International audienceAn optically shifted oscillator has been designed in integrated technology and tested in order to use as a signal generator for frequency modulated continuous wave radar applications. Simulation and measurement results demonstrate a 200 MHz microwave frequency tuning range when the applied optical power varies from 0 to 100 mW at a wavelength of 800 nm. Illumination is applied on a photoconductive switch inserted within the circuit to achieve a quasi-linear oscillation frequency shift with a linear variation of optical powe

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“…Among these technologies are electrostatically [1] and magnetically [2] actuated cantilever beam based MEMS contacting switches, thermally activated vanadium dioxide based phase change switches [3], light activated photo-conductive switches [4], liquid metal switches [5], GaN based FET switching [6], and GaAs FET based switching [7].…”

Section: Introductionmentioning

confidence: 99%

Low Cost DC to 6 GHz Electronic Step Attenuator SMT MCMs with Gate Lag Elimination By Use of High Intensity LEDs

Nicholson

2006

2006 European Microwave Conference

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Output step attenuators for microwave test instrumentation are continually being pushed to perform faster, more reliably, with lower loss and less distortion, and at lower cost. This paper describes a state of the art GaAs FET switch IC based, high dynamic range step attenuator topology using SMT MCMs operating from DC to 6 GHz that has low loss, low distortion, fast switching speed with minimized transients, and low cost. These modules use light from high intensity LEDs reflected off of the package lid in a novel, low cost manner to provide compact, inexpensive elimination of the gate lag effect commonly associated with GaAs FET based switching, such that this attenuator provides an amplitude stable output within 20us of when a change of attenuation state is initiated. This is the first reported usage of light from LEDs reflected off of the lid of an MCM SMT package to eliminate the gate lag effect in a GaAs FET switch based subsystem.

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Microwave switch: LAMPS (light-activated microwave photoconductive switch)

Cited by 13 publications

References 5 publications

Characterising the linearity of an optically controlled photoconductive microwave switch

Characterising the linearity of an optically controlled photoconductive microwave switch

Optical generation of microwave signal for FMCW radar applications

Low Cost DC to 6 GHz Electronic Step Attenuator SMT MCMs with Gate Lag Elimination By Use of High Intensity LEDs

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