Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substrates

Fischer, R.; Klem, John F.; Peng, C. K.; Gedymin, J.S.; Morkoç̌, H.

doi:10.1109/edl.1986.26311

Cited by 29 publications

(1 citation statement)

References 9 publications

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“…Various HBT configurations are possible depending on the location of the wide-bandgap emitter and whether contact is made through the substrate or from the front Heterojunction (emitter-up) devices, in a configuration similar to that illustrated in Fig. 4a, have exhibited good performances at microwave frequencies [32].…”

Section: Heterojunction Bipolar Transistorsmentioning

confidence: 99%

Epitaxial GaAs on Si: Progress and Potential Applications

Shaw

1987

MRS Proc.

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Recent successes, such as the demonstration of a iK SRAM, have established epitaxial GaAs on Si substrates as a promising technology rather than a device designer's dream. For the first time we can seriously consider combining the individual electronic and optical properties of GaAs and Si within a single epitaxial structure. Applications for GaAs on Si range from those that simply utilize the Si as a low-cost, large-area passive substrate with superior strength and thermal conductivity to the long-sought multifunction integrated circuits where Si and III-V components are integrated within a single monolithic chip. This paper will attempt to provide a realistic appraisal of the potential applications of epitaxial GaAs on Si with emphasis on the special demands imposed by each application and barriers that must be circumvented.

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Section: Heterojunction Bipolar Transistorsmentioning

confidence: 99%