Microwave Power Sensors With Integrated Filtering Function for Transfer Power Standards

Dinh, Duc D.; Lancaster, M.J.

doi:10.1109/lmwc.2020.2969570

Cited by 9 publications

(6 citation statements)

References 21 publications

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“…There is a frequency shift between simulated and measured systems due to the tolerances of the quartz dielectric and waveguide, in all other ways the model behaves within expectations and demonstrates the viability of air-bridged Schottky diodes as tuning elements in mmWave systems. The unit cell demonstrated in this study provides supporting evidence that large scale, low loss, individually addressable, reconfigurable metasurfaces may be possible at switching speeds that are limited by control line parasitics, rather than the physical limits of the switching element itself 20 .…”

Section: Introductionsupporting

confidence: 58%

“…There is significant interest in the use of novel diode technologies, such as those based on Gallium Arsenide (GaAs) air-bridged Schottky configurations, which are designed to remove significant parasitic elements that limit high frequency performance 18 . Applications of this class of GaAs Schottky diodes are found in mixers and frequency multipliers at submillimetre frequencies for use in test equipment, scientific experimentation, security and communication system components up to and beyond 300 GHz 19 , 20 . The air-bridged Schottky diode configuration reduces the anode to cathode capacitance by removing the GaAs between mesas, with a gold finger contact bridging the gap between the two halves of the device 21 .…”

Section: Introductionmentioning

confidence: 99%

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Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters

Vassos

Churm

Powell

et al. 2021

Sci Rep

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A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB at V-band. The air-bridged Schottky diode provides a tuneable capacitance in the range between 30 and 50 fF under an applied reverse voltage bias. This can be used to alter the resonant frequency and phase response of a split patch unit cell of a periodic metasurface. The air-bridged diode die, which is flip-chip soldered to the patch, has ultra-low parasitic capacitance and resistance. Simulated and measured results are presented which verify the potential for the attainment of diode switching speeds with acceptable losses at mmWave frequencies. Furthermore the study shows that this diode-based unit cell can be integrated into metamaterial components, which have potential applications in future mmWave antenna beam-steering, intelligent reflecting surfaces for 6G communications, reflect-arrays, transmit-arrays or holographic antennas.

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Section: Introductionsupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters

Vassos

Churm

Powell

et al. 2021

Sci Rep

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“…When subjected to a microwave signal, the temperature of its temperature dependent element changes which causes its resistance to change that can be used to determine the amount of microwave power. Several bolometric power sensors have been reported in [9]- [12].…”

Section: Introductionmentioning

confidence: 99%

Design, Fabrication, and Characterization of a D-Band Bolometric Power Sensor

Salek

Celep

Weimann

et al. 2022

IEEE Trans. Instrum. Meas.

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Where a licence is displayed above, please note the terms and conditions of the licence govern your use of this document.When citing, please reference the published version. Take down policy While the University of Birmingham exercises care and attention in making items available there are rare occasions when an item has been uploaded in error or has been deemed to be commercially or otherwise sensitive.

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“…Perhaps the major reason is that traditionally used analytical or network-equivalent tools are no longer adequate when EM cross-couplings [5], substrate anisotropy [6], the effects of environmental components (connectors, housing, nearby devices) [7], or multi-physics phenomena [8], are to be taken into account. At the same time, the topological complexity of microwave circuits has been gradually increasing to meet the stringent performance requirements pertinent to emerging areas (5G communications [9], energy harvesting [10], wireless power transfer [11], space applications [12]), to enable miniaturization [13]- [15], or to implement additional functionalities (dual-band [16], [17] or multi-band operation [18], [19], tunability [20], unconventional phase characteristics [21], etc.). Topologically sophisticated circuits are described by a large number of design variables that need to be simultaneously tuned in pursuit of controlling multiple performance figures and constraints.…”

Section: Introductionmentioning

confidence: 99%

Reduced-Cost Microwave Design Closure by Multi-Resolution EM Simulations and Knowledge-Based Model Management

2021

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Parameter adjustment through numerical optimization has become a commonplace of contemporary microwave engineering. Although circuit theory methods are ubiquitous in the development of microwave components, the initial designs obtained with such tools have to be further tuned to improve the system performance. This is particularly pertinent to miniaturized structures, where the cross-coupling effects cannot be adequately accounted for using equivalent networks. For the sake of reliability, design closure is normally performed using full-wave electromagnetic (EM) simulation models, which entails considerable computational expenses, often impractically excessive. Available mitigation techniques include acceleration of the conventional (e.g., gradient-based) routines using adjoint sensitivities or sparse sensitivity updates, surrogate-assisted and machine learning algorithms, the latter often combined with nature-inspired procedures. Another alternative is the employment of variable-fidelity simulations (e.g., space mapping, co-kriging), which is most often limited to two levels of accuracy (coarse/fine). This work discusses an EM model management approach coupled with trust-region gradient-based routine, which exploits problem-specific knowledge for continuous (multi-level) modification of the discretization density of the microwave structure at hand in the course of the optimization run. The optimization process is launched at the lowest discretization level, thereby allowing for low-cost exploitation of the knowledge about the device under study. Subsequently, based on the convergence indicators, the model fidelity is gradually increased to ensure reliability. The simulation fidelity selection is governed by the algorithm convergence indicators. Computational speedup (i.e., reduction in the number of EM simulations required by the optimization process to converge) is achieved by maintaining low resolution in the initial stages of the optimization run, whereas design quality is secured by eventually switching to the high-fidelity model when close to concluding the process. Numerical verification is carried out using two microstrip circuits, a dual-band power divider and a dual-band branch-line coupler, with the average savings of almost sixty percent when compared to single-fidelity optimization.

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Microwave Power Sensors With Integrated Filtering Function for Transfer Power Standards

Cited by 9 publications

References 21 publications

Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters

Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters

Design, Fabrication, and Characterization of a D-Band Bolometric Power Sensor

Reduced-Cost Microwave Design Closure by Multi-Resolution EM Simulations and Knowledge-Based Model Management

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