Microwave Power Limiting Devices Based on the Semiconductor–Metal Transition in Vanadium–Dioxide Thin Films

Givernaud, Julien; Crunteanu, Aurelian; Orlianges, Jean‐Christophe; Pothier, A.; Champeaux, Corinne; Catherinot, A.; Blondy, Pierre

doi:10.1109/tmtt.2010.2057172

Cited by 62 publications

(20 citation statements)

References 11 publications

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“…The resistivity change is more than three orders of magnitude shown in the figure 4. This change in resistivity is comparable to devices prepared by others [5][6][7][8]. The sample exhibited a slight hysteresis when one compares the resistivity versus temperature curves for increasing and decreasing temperatures.…”

Section: Device Design and Fabricationsupporting

confidence: 84%

Vanadium dioxide thin film series single-pole single throw switch

Pan

Freeman

Brown

et al. 2014

NAECON 2014 - IEEE National Aerospace and Electronics Conference

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Vanadium dioxide (VO 2 ) thin films have unique insulator to metal transition above the critical temperature of 72 ºC. In this research, VO 2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave switching devices with integrated heating coil. The VO 2 thin film based devices showed insulator performance at room temperature and metallic state (low resistive phase) at 80 ºC. Switching devices designed using a VO 2 series varistor showed good isolation (< -30 dB) and low insertion loss (> -5 dB) up to 20 GHz.

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Section: Device Design and Fabricationsupporting

confidence: 84%

Vanadium dioxide thin film series single-pole single throw switch

Pan

Freeman

Brown

et al. 2014

NAECON 2014 - IEEE National Aerospace and Electronics Conference

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“…We then calculate the threshold and conclusively demonstrate that the drop is caused by RF-triggering of the phase transition. Modulation of microwave transmission as a function of RF power in 2-port shunt devices has been studied [8], but here we explicitly demonstrate a complete phase transition with RF excitation in , and we examine power and switching characteristics therein.…”

Section: Introductionmentioning

confidence: 93%

Abrupt Insertion Loss Drop by RF-Triggering of the Phase Transition in <formula formulatype="inline"><tex Notation="TeX">${\rm VO}_{2}$</tex></formula> CPW Switches

Zhou

Fisher

et al. 2014

IEEE Microw. Wireless Compon. Lett.

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We demonstrate an abrupt drop in insertion loss (up to 21 dB) at a critical RF (10 GHz) power in 2-port series co-planar waveguides incorporating vanadium dioxide thin films. We rigorously determine the critical delivered power for switching by calculating the waveguide reflection coefficients from a lumped element model. Through analysis of the critical RF power, we find definitively that the drop is caused by RF triggering of the vanadium dioxide metal-insulator phase transition in the absence of DC bias. The sharp insertion loss drop may have use in broadband receiver protectors, RF switching, and tunable coupling applications.

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“…The proposed research makes it possible for a novel tunable inductive structure with smaller size and straight forward manufacturing. The structure of the tunable inductor is a planar design with simple fabrication process, and the vanadium dioxide (VO 2 ) thin film stubs are used as switches instead of having any movable parts such as in a MEMS switch [7,8].…”

Section: Introductionmentioning

confidence: 99%

Tunable Inductors Using Integrated Vanadium Dioxide Phase Change Thin Films

Wang

Shin

et al. 2018

Advances in Condensed Matter Physics

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This paper presents tunable inductors designed with vanadium dioxide (VO 2 ) thin film to implement tunability. Two types of configurations, a single line coil inductor and a dual line coil inductor, are proposed. Tunable inductance is realized by thermally controlling VO 2 thin film stub to be an insulator or a conductor. The measurements of inductors are taken in the frequencies range from 0.01 GHz to 10 GHz. The electrical model has been developed to derive the corresponding inductance. The results show that the tuning range is about 69% when the temperature changes from room temperature to above the critical temperature of 68 ∘ C.

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Microwave Power Limiting Devices Based on the Semiconductor–Metal Transition in Vanadium–Dioxide Thin Films

Cited by 62 publications

References 11 publications

Vanadium dioxide thin film series single-pole single throw switch

Vanadium dioxide thin film series single-pole single throw switch

Abrupt Insertion Loss Drop by RF-Triggering of the Phase Transition in <formula formulatype="inline"><tex Notation="TeX">${\rm VO}_{2}$</tex></formula> CPW Switches

Tunable Inductors Using Integrated Vanadium Dioxide Phase Change Thin Films

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