Microwave plasma enhanced CVD of aluminum oxide films: OES diagnostics and influence of the RF bias

Tristant, Pascal; Ding, Zhiyong; Vinh, Q.B. Trang; Hidalgo, Hervé; Jauberteau, Jean-Louis; Desmaison, J.; Dong, Chong

doi:10.1016/s0040-6090(01)00924-5

Cited by 32 publications

(24 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The short list is notable for its variety of precursors and the breadth of plasma conditions involved. The organic ligands employed range from simple to complex including metal alkyls, (7,12,14) metal alkoxides, (5,6,17) and β-diketonate structures. (19,20) Table III also represents a number of plasma sources including capacitively coupled, high-density ECR, and high-pressure microwave plasmas.…”

Section: Utility Of This Approach To Other Systemsmentioning

confidence: 99%

“…(1) For these same advantages PEC-VD has recently been extended to the synthesis of numerous metal oxide thin films including advanced dielectrics (Ta 2 O 5 , (2) HfO 2 , (3,4) ZrO 2 , (5,6) Ga 2 O 3 , (7) ), electrochromics (WO 3 , (8,9) V 2 O 5 (10,11) ), transparent conductors (SnO 2 , (12,13) ZnO (14,15) ), optical coatings (Al 2 O 3 , (16,17) TiO 2 (18) ), and complex oxides (yittria-stabilized zirconia, (19,20) BaTiO 3 , (21) SrTiO 3 (20,22) ). For the most part the efforts to date have been experimental, focused on intrinsic film properties and relationships to device performance.…”

Section: Introductionmentioning

confidence: 99%

“…(5)(6)(7)(8)(9)(12)(13)(14)(17)(18)(19)(20)(21) However, to date there has been little or no plasma modeling performed on these systems. Plasma modeling has proven to be a particularly useful tool for microelectronic manufacturing.…”

Section: Introductionmentioning

confidence: 99%

“…As such PECVD modeling has been essentially limited to its derivatives including a-Si, (25) Si 3 N 4 , (26) and SiO 2 . (1,27) Metal oxide thin films besides silica are typically derived from either metal halide (8)(9)(10)12,19) or metalorganic (2)(3)(4)(5)(6)(7)10,(13)(14)(15)17,(20)(21)(22) sources. In the latter case, precursor dissociation results in extensive hydrocarbon chemistry.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The Role of Oxygen Dissociation in Plasma Enhanced Chemical Vapor Deposition of Zinc Oxide from Oxygen and Diethyl Zinc

Wolden

2005

Plasma Chem Plasma Process

View full text Add to dashboard Cite

The influence of electron impact dissociation of oxygen on neutral chemistry was studied for plasma-enhanced chemical vapor deposition (PECVD) of zinc oxide using oxygen and diethyl zinc. Electron conditions in the reactor were estimated based on simulations of well-known Ar-O 2 plasmas, while the majority of the thermal chemistry was abstracted from the combustion literature. A rudimentary model of film growth was developed using the rate of oxygen dissociation as the lone adjustable parameter. Model results were compared directly with experimental measurements of deposition rates and neutral species densities for a wide range of conditions. Good quantitative agreement between experiments and model were observed as a function of composition and rf power. The system is highly sensitive to the electron impact dissociation of oxygen, which creates the radical pool that drives the majority of the chemistry. The approach detailed here provides a framework for the development of models of oxide PECVD derived from other metalorganic precursors.

show abstract

Section: Utility Of This Approach To Other Systemsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The Role of Oxygen Dissociation in Plasma Enhanced Chemical Vapor Deposition of Zinc Oxide from Oxygen and Diethyl Zinc

Wolden

2005

Plasma Chem Plasma Process

View full text Add to dashboard Cite

show abstract

“…An attractive candidate for outstanding Si surface passivation is aluminum oxide (Al2O3), which can be deposited by physical vapor deposition (PVD) system [ 1], chemical vapor deposition (CVD) system [2][3][4], liquid-phase deposition (LPD) technique [5,6], and atomic layer deposition (ALD) system [7][8][9]. Generally, ALD system is the most suitable choice for the deposition of Al2O3 owing to some advantages: (i) capable of producing very thin conformal and uniform films, (ii) with large process temperature window, and (iii) able to deposit films on high-aspect-ratio substrates.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Lien¹,

Yang²,

Wu³

et al. 2016

Nano Online

View full text Add to dashboard Cite

. Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system, nano Online (2016). DOI: https://doi.org/10.1515/nano.11671_2015.154Originally published in: Shui-Yang Lien, Chih-Hsiang Yang, Kuei-Ching Wu, Chung-Yuan Kung. Investigation on the passivated Si/Al2O3 interface fabricated by nonvacuum spatial atomic layer deposition system, Nanoscale Research Letters. 10 (2015). DOI: https://doi.org/10.1186/s11671-015-0803-9Lien et al., 2015. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this study, an ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by our group, is hired to deposit Al2O3 films. Upon post-annealing for the Al2O3 films, the unwanted delamination, regarded as blisters, was found by an optical microscope. This may lead to a worse contact within the Si/Al2O3 interface, deteriorating the passivation quality. Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters. The residual blisters can be further out-gassed when the Al2O3 films are thinned to 8 nm and annealed above 650°C. Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively. The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm2, fill factor of 0.776, and the efficiency of 19.18% can be achieved.Keywords: PERC; Non-vacuum spatial atomic layer deposition; Al2O3/SiNx:H stacked rear passivation; Blister; Triple-layer SiO2/Al2O3/SiNx ; H stacked passivation films BackgroundFor the past decade years, dielectric films have become promising materials applied in high-efficiency silicon solar cells due to their superior surface passivation effect.An attractive candidate for outstanding Si surface passivation is aluminum oxide (Al2O3), which can be deposited by physical vapor deposition (PVD) system [ 1], chemical vapor deposition (CVD) system [2-4], liquid-phase deposition (LPD) technique [5,6], and atomic layer deposition (ALD) system [7][8][9]. Generally, ALD system is the most suitable choice for the deposition of Al2O3 owing to some advantages: (i) capable of producing very thin conformal and unif...

show abstract

Chemical liquid phase deposition of thin aluminum oxide films

Sun

2004

Chin. J. Chem.

View full text Add to dashboard Cite

FilmsSUN, Jie "'(bJ\@) SUN, Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [A12(SO&]=O.O837 mol-L-', [NaHC03]= 0.214 mol-L-', 15 %. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of A1203 films in this work is supported by electron dispersion spectroscopy.Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph. KeywordsFourier transform infrared spectrum, X-ray diffraction, scanning electron microscopy aluminum oxide, chemical liquid phase deposition. pH value, electron dispersion spectroscopy,

show abstract

Microwave plasma enhanced CVD of aluminum oxide films: OES diagnostics and influence of the RF bias

Cited by 32 publications

References 13 publications

The Role of Oxygen Dissociation in Plasma Enhanced Chemical Vapor Deposition of Zinc Oxide from Oxygen and Diethyl Zinc

The Role of Oxygen Dissociation in Plasma Enhanced Chemical Vapor Deposition of Zinc Oxide from Oxygen and Diethyl Zinc

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Chemical liquid phase deposition of thin aluminum oxide films

Contact Info

Product

Resources

About