Chemical liquid phase deposition of thin aluminum oxide films

Sun, Yingchun

doi:10.1002/cjoc.20040220710

Cited by 16 publications

(14 citation statements)

References 33 publications

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“…The spectra have no C-related peaks after CVD, implying atomic-scale thickness. The curves before and after graphene growth are very similar (no additional features in 3000-3700 cm −1 range), 19,20 suggesting the lack of −OH groups. This offers an advantage over the wet-transferred graphene, where H 2 O is likely to be trapped at the interfaces.…”

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confidence: 89%

“…15 A similar example can be found in liquid phase deposition, where flat substrates help sol particles to form thin films as opposed to the otherwise favorable clumpy precipitates. 19,20 The discussion above can be generalized to explain graphene growth on any nonmetallic substrate that withstands ∼1000 o C by CVD using hydrocarbons, not limited to CH 4 . Obviously, the substrate materials and their preparation play an important role in the growth kinetics.…”

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confidence: 99%

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Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Sun

Cole

Lindvall

et al. 2012

Applied Physics Letters

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A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 o C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metalcatalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp 2 -C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production.Graphene, a monolayer of sp 2 carbon atoms, has received much attention. The use of graphene in transparent electronics is one of its most promising applications. 1 Apart from its high transparency/conductivity, the flexibility and ease of integration on a variety of substrates are obvious advantages. 30-inch graphene has been demonstrated by virtue of the recent advances in chemical vapor deposition (CVD), 2 which is compatible with the existing semiconductor technology. 3 Nevertheless, the necessity of etching the metal catalyst and transfer of graphene to foreign substrates hampers wide industrialization. Thus, efforts are put into the metal-free growth of graphene on materials including SiO 2 , 4-6 Al 2 O 3 , 7 MgO, 8 etc. To date, however, the graphitization process on dielectrics is poorly understood while the experiments are largely experience based. Recently, we have shown that large-area uniform graphene can be grown on virtually any hightemperature substrates, on Si 3 N 4 or HfO 2 , for instance. 9 In this letter, we provide a broader and deeper insight, discussing in detail the growth mechanism of graphene directly on insulators. As an example, we show our results on graphene on quartz and sapphire, hinting at the future prospects of the transfer-free graphene for transparent electrodes.Bulk graphite is usually made at >3000 o C and catalysis is needed to lower the temperature. 10 However, nanoscale graphene flakes form without any catalysts at merely ∼1000 o C. For example, carbon black which is produced massively by natural gas pyrolysis 11-14 is nothing else but chaotically connected graphene flakes. 11 Although widely used in industry, this process has so far been overlooked for making large-area graphene. Here, we show that macroscopically amorphous carbon black can be turned into textured graphene thin films when a) Electronic mail: jiesu@chalmers.se. the carbon precursor concentration and growth temperature are high, also requiring a relatively long deposition time and flat substrate. Fig. 1(a) illustrates the CVD reactor used in this work. The middle region is heated to 1000 o C while the left and right sides are <600 o C. There is no material deposition in the right zone because of the reduced CH 4 decomposition efficiency at lo...

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confidence: 89%

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confidence: 99%

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Sun

Cole

Lindvall

et al. 2012

Applied Physics Letters

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“…1 This lower temperature deposition also does not influence device characteristics and wiring reliability because of decreased thermal stress, and thus it is useful on multilevel interconnection interlayer dielectrics. [5][6][7] During LPD, oxides are precipitated and form thin films such as titanium oxide (TiO 2 8 and strontium titanate (SrTiO 3 . 9 Silicon dioxide (SiO 2 ) thin films also may form during LPD, and these films are quite versatile and applicable to various fields.…”

Section: Introductionmentioning

confidence: 99%

“…Sun et al reported that the growth speed of aluminum oxide thin films, which are deposited by chemical liquid phase deposition on semiconductors, are influenced by experimental conditions such as reagent concentration and reaction temperature. 5 They also investigated the growth mechanism of aluminum oxide thin films and propose a model for the pH-controlled deposition of Al 2 O 3 . Tsukuma et al reported that the formation of SiO 2 films, including the film composition and properties, is influenced by silicic acids with organic functional groups.…”

Section: Introductionmentioning

confidence: 99%

Liquid Phase Deposition of Silicon Dioxide on the Silica Beads Array as Nanostructured Surface

Yoon¹,

Park²,

Lee³

2017

sci adv mater

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Liquid phase deposition (LPD) is one of a production of oxide film, which is useful due to low reaction temperature and production cost. Previously, there have been many efforts to investigate the LPD on the flat surface in view of thickness, density, and composition of oxide film. The coating of nanomaterials using LPD was recently reported, but the mechanism of LPD on the nanostructured surface has not yet been conducted. In this work, we compared the LPD of silicon dioxide on the flat surface and nanostructured surface which is hexagonally close-packed silica beads array. We demonstrated that the nanostructured topography of surface induced local deposition of silicic acid unlike flat surface, resulting in the interesting shape of silica beads. Further, we proposed the different mechanism of local LPD between flat surface and nanostructured surface.

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“…An attractive candidate for outstanding Si surface passivation is aluminum oxide (Al2O3), which can be deposited by physical vapor deposition (PVD) system [ 1], chemical vapor deposition (CVD) system [2-4], liquid-phase deposition (LPD) technique [5,6], and atomic layer deposition (ALD) system [7][8][9]. Generally, ALD system is the most suitable choice for the deposition of Al2O3 owing to some advantages: (i) capable of producing very thin conformal and uniform films, (ii) with large process temperature window, and (iii) able to deposit films on high-aspect-ratio substrates.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Lien¹,

Yang²,

Wu³

et al. 2016

Nano Online

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. Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system, nano Online (2016). DOI: https://doi.org/10.1515/nano.11671_2015.154Originally published in: Shui-Yang Lien, Chih-Hsiang Yang, Kuei-Ching Wu, Chung-Yuan Kung. Investigation on the passivated Si/Al2O3 interface fabricated by nonvacuum spatial atomic layer deposition system, Nanoscale Research Letters. 10 (2015). DOI: https://doi.org/10.1186/s11671-015-0803-9Lien et al., 2015. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this study, an ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by our group, is hired to deposit Al2O3 films. Upon post-annealing for the Al2O3 films, the unwanted delamination, regarded as blisters, was found by an optical microscope. This may lead to a worse contact within the Si/Al2O3 interface, deteriorating the passivation quality. Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters. The residual blisters can be further out-gassed when the Al2O3 films are thinned to 8 nm and annealed above 650°C. Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively. The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm2, fill factor of 0.776, and the efficiency of 19.18% can be achieved.Keywords: PERC; Non-vacuum spatial atomic layer deposition; Al2O3/SiNx:H stacked rear passivation; Blister; Triple-layer SiO2/Al2O3/SiNx ; H stacked passivation films BackgroundFor the past decade years, dielectric films have become promising materials applied in high-efficiency silicon solar cells due to their superior surface passivation effect.An attractive candidate for outstanding Si surface passivation is aluminum oxide (Al2O3), which can be deposited by physical vapor deposition (PVD) system [ 1], chemical vapor deposition (CVD) system [2-4], liquid-phase deposition (LPD) technique [5,6], and atomic layer deposition (ALD) system [7][8][9]. Generally, ALD system is the most suitable choice for the deposition of Al2O3 owing to some advantages: (i) capable of producing very thin conformal and unif...

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Chemical liquid phase deposition of thin aluminum oxide films

Cited by 16 publications

References 33 publications

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Liquid Phase Deposition of Silicon Dioxide on the Silica Beads Array as Nanostructured Surface

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

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