2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-A 2021
DOI: 10.1109/imws-amp53428.2021.9643909
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Microwave MIM Capacitors Enabled by an iCVD N-type Parylene Dielectric for Flexible MMIC

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“…Microwave metal–insulator–metal (MIM) capacitors were fabricated using the dielectric N‐parylene grown by iCVD. [ 69 ] The iCVD MIM capacitors were demonstrated to be mechanically stable and remain robust at tensile strains up to at least 2%. In contrast, MIM capacitors fabricated on plastic substrates with conventional SiO 2 or TiO 2 dielectrics tolerate tensile strains of < 0.2%.…”
Section: Logic and Memory Devicesmentioning
confidence: 99%
“…Microwave metal–insulator–metal (MIM) capacitors were fabricated using the dielectric N‐parylene grown by iCVD. [ 69 ] The iCVD MIM capacitors were demonstrated to be mechanically stable and remain robust at tensile strains up to at least 2%. In contrast, MIM capacitors fabricated on plastic substrates with conventional SiO 2 or TiO 2 dielectrics tolerate tensile strains of < 0.2%.…”
Section: Logic and Memory Devicesmentioning
confidence: 99%