Microwave magnetoelectric devices

Татаренко, А. С.; Бичурин, М. И.; Сринивасан, Г.

doi:10.1109/crmico.2004.183284

Cited by 1 publication

(2 citation statements)

References 6 publications

(7 reference statements)

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“…(1), piezoelectric substrates with larger piezoelectric coefficient d should be considered. Tatarenko and Bichurin designed and fabricated layered YIG/PMN-PT structures, 29 see Fig. 2, in which the PMN-PT has stronger piezoelectric property.…”

Section: Fmr Tuning In Bulk Multiferroic Heterostructuresmentioning

confidence: 99%

“…Lots of layered strain/stress dominated multiferroic heterostructures such as bulk/bulk, [27][28][29][30][31] thin film/bulk [32][33][34][35][36][37][38][39][40][41][42][43][44][45] and thin film/thin film 47 magnetic/ferroelectric or magnetic/piezoelectric heterostructures were demonstrated in this paper. By applying voltage across the ferroelectric/piezoelectric layer, the ferroelectric/piezoelectric layer generates a large strain/stress energy change that influence the magnetic layer, therefore, change the effective magnetic anisotropy energy which lead to an effective FMR field or frequency change.…”

Section: Introductionmentioning

confidence: 99%

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Voltage control of ferromagnetic resonance

et al. 2016

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Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME) coupling mechanism: strain/stress, interfacial charge, spin-electromagnetic (EM) coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR) in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin-EM coupling and exchange coupling.

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Section: Fmr Tuning In Bulk Multiferroic Heterostructuresmentioning

confidence: 99%