Voltage control of ferromagnetic resonance

Abstract

Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME) coupling mechanism: strain/stress, interfacial charge, spin-electromagnetic (EM) coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR) in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin-EM coupling and exchange coupling.

Magnetoelectric Coupling in Room Temperature Multiferroic Ba2EuFeNb4O15/BaFe12O19 Epitaxial Heterostructures Grown by Laser Ablation

“…In addition, the ferroelectric TTB-Eu layer filling the space between the magnetic BaFO nanorods increases the area of the interface between the two layers. This does enhance the interfacial interactions between the two components of this multiferroic composite system, enhancing the magnetoelectric coupling [ 50 , 51 , 52 ] between the ferroelectric (TTB-Eu) and the magnetic (BaFO) components.…”

Voltage control of ferromagnetic resonance and spin waves

“…[9] Numerous research achievements have been reported on voltage tuning of FMR involving various geometries and materials. [9,[32][33][34][35][36] Voltage control of magnetism may facilitate wide FMR modification in an energy efficient way for application in voltage-tunable spintronic devices. [37]…”

“…[44] Nevertheless, the FMR measurements were often accompanied by a large FMR linewidth from the magnetic phase, which limits the practical application. [35,45] In order to reduce the FMR linewidth while maintaining giant electrical modulation, Liu et al reported on a novel amorphous FeGaB film as a magnetic layer that retained strong absorption over a small linewidth of approximatively 50 Oe, [22] while preserving PZN-PT(011) as the piezoelectric substrate. [46] The 50-nm-thick FeGaB film was deposited onto PZN-PT(011) substrates utilizing co-sputtering of Fe 80 Ga 20 and B targets.…”

Strain-Mediated Converse Magnetoelectric Coupling in La0.7Sr0.3MnO3/Pb(Mg1/3Nb2/3)O3–PbTiO3 Multiferroic Heterostructures

“…Electric field instead of the conventional current trigger can not only reduce the energy consumption but also increase the efficiency of functional devices. − These features greatly expand the application range of magnetic materials and demonstrate its broad application in the field of new magnetoelectric storage devices, ,, microwave devices, and logic circuits. − Therefore, great efforts have been dedicated to achieving converse ME coupling via voltage modulated magnetization without the external magnetic field and study the mechanisms of this coupling in piezoelectric/ferromagnetic heterostructures at room temperature. The purpose of this article is to realize a purely electric field control of magnetism variation in LSMO/PMN–PT multiferroic heterostructures by means of the room-temperature MOKE measurement, which possesses a very high precision, in situ, and nondestructive test. − This work presents the change of magnetic hysteric loops under different DC voltages.…”