Microwave ECR plasma CVD of cubic Y2O3 coatings and their characterization

Barve, S.A.; Jagannath,; Mithal, N.; Deo, M. N.; Chand, Naresh; Bhanage, Bhalchandra M.; Gantayet, L.M.; Patil, D.S.

doi:10.1016/j.surfcoat.2010.03.003

Cited by 55 publications

(20 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Qualitatively, it can be seen from Figure 4 that, sub‐peak group corresponding to CO bonding is decreasing in amplitude, as the flow rate of oxygen in increased in the deposition of film A to film C. C 1 s peak is deconvoluted into subpeaks as shown in Figure 5. It can be seen that, main subpeak in the C 1 s peaks of all the films, is at ≈284.6 eV and can be identified as free carbon 8. Subpeaks at binding energies at around 285.5 eV, ≈289 eV, 290.2 eV and ≈291.5 eV represent COH/COC, CO, OCO and (O) 2 CO bonding respectively 9.…”

Section: Resultsmentioning

confidence: 92%

See 1 more Smart Citation

Microwave ECR Plasma Assisted MOCVD of Y₂O₃ Thin Films Using Y(tod)₃ Precursor and Their Characterization

Barve

Deo

Kar

et al. 2011

Plasma Processes & Polymers

View full text Add to dashboard Cite

Yttrium oxide (Y2O3) thin films were deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process using indigenously developed metal organic precursors Yttrium 2,7,7‐trimethyl‐3,5‐octanedionates, commonly known as Y(tod)3 which were synthesized by an ultrasound method. A series of thin films were deposited by varying the oxygen flow rate from 1–9 sccm, keeping all other parameters constant. The deposited coatings were characterized by X‐ray photoelectron spectroscopy, glancing angle X‐ray diffraction and infrared spectroscopy. Thickness and roughness for the films were measured by stylus profilometry. Optical properties of the coatings were studied by the spectroscopic ellipsometry. Hardness and elastic modulus of the films were measured by nanoindentation technique. Being that microwave ECR CVD process is operating‐pressure‐sensitive, optimum oxygen activity is very essential for a fixed flow rate of precursor, in order to get a single phase cubic yttrium oxide in the films. To the best of our knowledge, this is the first effort that describes the use of Y(tod)3 precursor for deposition of Y2O3 films using plasma assisted CVD process.

show abstract

Section: Resultsmentioning

confidence: 92%

“…Microwave ECR plasma‐assisted MOCVD setup that is used for the depositions is described in detail elsewhere 8. Initially substrates were thoroughly cleaned in RCA‐I solution and then in 10% HF solution for 2 min to remove the native oxide on the surface of the substrates.…”

Section: Methodsmentioning

confidence: 99%

Microwave ECR Plasma Assisted MOCVD of Y₂O₃ Thin Films Using Y(tod)₃ Precursor and Their Characterization

Barve

Deo

Kar

et al. 2011

Plasma Processes & Polymers

View full text Add to dashboard Cite

show abstract

“…Meanwhile, the two binding energy peaks located at 158.5 and 160.5 eV correspond to a Y–O bond, resulting in a low binding energy. Figure 5b shows the YF 3 coating XPS spectra on the etched surface deconvoluted into four peaks, corresponding to Y–F bonding (located at 159.5 and 161.5 eV) and Y–O bonding (located at 157 and 159 eV) [27,28]. Furthermore, the intensity ratio of Y–F to Y–O peaks on the YF 3 coating reached 2.9, which was much higher than that of the Y–F to Y–O peak on the Y 2 O 3 coating (0.73), indicating stronger fluorination on the etched YF 3 coating surface.…”

Section: Resultsmentioning

confidence: 99%

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

et al. 2017

View full text Add to dashboard Cite

Yttrium fluoride (YF3) and yttrium oxide (Y2O3) protective coatings prepared using an atmospheric plasma spraying technique were used to investigate the relationship between surface erosion behaviors and their nanoparticle generation under high-density plasma (1012–1013 cm−3) etching. As examined by transmission electron microscopy, the Y2O3 and YF3 coatings become oxyfluorinated after exposure to the plasma, wherein the yttrium oxyfluoride film formation was observed on the surface with a thickness of 5.2 and 6.8 nm, respectively. The difference in the oxyfluorination of Y2O3 and YF3 coatings could be attributed to Y–F and Y–O bonding energies. X-ray photoelectron spectroscopy analyses revealed that a strongly fluorinated bonding (Y–F bond) was obtained on the etched surface of the YF3 coating. Scanning electron microscopy and energy dispersive X-ray diffraction analysis revealed that the nanoparticles on the 12-inch wafer are composed of etchant gases and Y2O3. These results indicate that the YF3 coating is a more erosion-resistant material, resulting in fewer contamination particles compared with the Y2O3 coating.

show abstract

“…RE Cps and bidentate β ‐diketonates are thermally very robust. Thus high vaporization temperatures or more intricate techniques, i.e., radio frequency plasma‐assisted MOCVD, are required. Furthermore, insufficient decomposition can lead to high C incorporation.…”

Section: Introductionmentioning

confidence: 99%

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Karle

Dang

Prenzel

et al. 2015

Chemical Vapor Deposition

View full text Add to dashboard Cite

Thin films of Y 2 O 3 are deposited on Si(100) and Al 2 O 3 (0001) substrates via metal-organic (MO)CVD for the first time using two closely related yttrium tris-amidinate compounds as precursors in the presence of oxygen in the temperature range 400-700 8C. The structural, morphological, and compositional features of the films are investigated in detail. At deposition temperatures of 500 8C and higher both the precursors yield polycrystalline Y 2 O 3 thin films in the cubic phase. The compositional analysis revealed the formation of nearly stoichiometric Y 2 O 3 . The optical band gaps are estimated using UVVis spectroscopy. Preliminary electrical measurements are performed in the form of a metal oxide semiconductor (MOS) structure of Al/Y 2 O 3 /p-Si/Ag. Leakage currents and dielectric constants are also determined.

show abstract

Microwave ECR plasma CVD of cubic Y2O3 coatings and their characterization

Cited by 55 publications

References 32 publications

Microwave ECR Plasma Assisted MOCVD of Y₂O₃ Thin Films Using Y(tod)₃ Precursor and Their Characterization

Microwave ECR Plasma Assisted MOCVD of Y₂O₃ Thin Films Using Y(tod)₃ Precursor and Their Characterization

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Contact Info

Product

Resources

About

Microwave ECR plasma CVD of cubic Y2O3 coatings and their characterization

Cited by 55 publications

References 32 publications

Microwave ECR Plasma Assisted MOCVD of Y2O3 Thin Films Using Y(tod)3 Precursor and Their Characterization

Microwave ECR Plasma Assisted MOCVD of Y2O3 Thin Films Using Y(tod)3 Precursor and Their Characterization

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

Metal‐organic CVD of Y2O3 Thin Films using Yttrium tris‐amidinates

Contact Info

Product

Resources

About

Microwave ECR Plasma Assisted MOCVD of Y₂O₃ Thin Films Using Y(tod)₃ Precursor and Their Characterization

Microwave ECR Plasma Assisted MOCVD of Y₂O₃ Thin Films Using Y(tod)₃ Precursor and Their Characterization

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates