Microwave Diplexer Purely Based on Direct Synchronous and Asynchronous Coupling

Nwajana, Augustine O.; Yeo, Kenneth Siok Kiam

doi:10.13164/re.2016.0247

Cited by 20 publications

(17 citation statements)

References 22 publications

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“…Otherwise, a mixed coupling is realized because neither electric fields nor magnetic fields dominate the interaction between the resonators as depicted in Fig. 1(c) [18,19].…”

Section: Coupling Structure Between Square Olrsmentioning

confidence: 99%

Performance Enhancement of 60 GHZ Cmos Band Pass Filter Employing Oxide Height Virtual Increase

Mahmoud

Barakat²,

Nasr

et al. 2019

PIER M

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A high selectivity compact size coupled open-loop resonator (OLR-) band pass filter (BPF) in 0.18 µm TSMC Complementary Metal Oxide Semiconductor (CMOS) with low insertion (IL) is presented in this manuscript. First, shape optimization and folding are used to guarantee compact size. Then, high performance of the proposed BPF is obtained by virtually increasing the height of the oxide between the OLR's traces and their ground plane. This virtual increase in the oxide height is realized by etching large slot areas below each of the OLRs. Consequently, the traces are characterized by wider width which in return exhibit lower attenuation constant and hence lower IL. The simulated and measured responses have a very good agreement. The fabricated BPF shows an IL of 3.5 dB at 59 GHz with a return loss of 15 dB and a fractional bandwidth of 16.5%. The fabricated chip has an area of 378 × 430 µm 2 including the measurements pads.

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“…Otherwise, a mixed coupling is realized because neither electric fields nor magnetic fields dominate the interaction between the resonators as depicted in Fig. 1(c) [18,19].…”

Section: Coupling Structure Between Square Olrsmentioning

confidence: 99%

Performance Enhancement of 60 GHZ Cmos Band Pass Filter Employing Oxide Height Virtual Increase

Mahmoud

Barakat²,

Nasr

et al. 2019

PIER M

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show abstract

“…The actual function of the dual-band resonators is to establish the two passbands of the diplexer. D1 and D1' also contribute to the number of poles contained in the diplexer as explained in [19]. This is an advantage as it means that the proposed diplexer is relatively more compact when compared to conventional diplexers were resonant and non-resonant junctions are used for energy distribution.…”

Section: Diplexer Designmentioning

confidence: 99%

“…The microwave diplexer presented in this paper is based on the circuit model proposed in [19]. While [19] implemented the proposed circuit model using the traditional microstrip technology, the work presented in this paper employs the twenty-first century SIW transmission line technology for the diplexer implementation.…”

Section: Diplexer Designmentioning

confidence: 99%

“…While [19] implemented the proposed circuit model using the traditional microstrip technology, the work presented in this paper employs the twenty-first century SIW transmission line technology for the diplexer implementation. The coupling arrangement for the proposed 10-pole diplexer, as reported in [19] is shown in Fig. 2, where D1 and D1' are the dual-band resonators designed using the technique reported in [20].…”

Section: Diplexer Designmentioning

confidence: 99%

See 1 more Smart Citation

Substrate Integrated Waveguide (Siw) Diplexer With Novel Input/Output Coupling and No Separate Junction

Nwajana¹,

Dainkeh²,

Yeo³

2018

PIER M

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Abstract-A microwave diplexer implemented by using the twenty-first century substrate integrated waveguide (SIW) transmission line technology is presented. No separate junction (be it resonant or nonresonant) was used in achieving the diplexer, as the use of an external junction for energy distribution in a diplexer normally increases design complexity and leads to a bulky device. The design also featured a novel input/output coupling technique at the transmit and receive sides of the diplexer. The proposed SIW diplexer has been simulated using the full-wave finite element method (FEM), Keysight electromagnetic professional (EMPro) 3D simulator. The design has also been validated experimentally and results presented. Simulated and measured results show good agreement. The measured minimum insertion losses achieved on transmit and receive channels of the diplexer are 2.86 dB and 2.91 dB, respectively. The measured band isolation between the two channels is better than 50 dB.

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“…Bandpass filters are very useful and popular when it comes to achieving complex and multi-port devices and systems. A bandpass filter (BPF) is a device that passes frequencies within a single band while rejecting all other frequencies outside the band [9]. The design parameters of filters such as selectivity, cost, miniaturization, sensitivity to environmental effects, power handling capacity, in-band and out-of-band performance metrics, are critical specifications when it comes to the development of radio frequency (RF) and microwave front ends.…”

Section: Introductionmentioning

confidence: 99%

Low cost SIW Chebyshev bandpass filter with new input/output connection

Nwajana

Yeo

Dainkeh

2016

2016 16th Mediterranean Microwave Symposium (MMS)

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This paper presents a substrate integrated waveguide (SIW) Chebyshev bandpass filter using the low cost, commercially available printed circuit board (PCB) technology. The detailed design procedure beginning from the normalized Chebyshev lowpass filter, to the final optimized SIW bandpass filter is presented. The test filter having a 4% fractional bandwidth centered at 1.684 GHz was fabricated on a 1.27 mm thick, Rogers RT/Duroid 6010LM substrate with a 10.8 dielectric constant. The design has also been experimentally validated and results presented. The simulation and measurement responses of the filter show good agreement with a low insertion loss of 1.3 dB. The simulated and the measured return losses of about 15 dB and 16 dB respectively, were achieved across the filter passband.

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Microwave Diplexer Purely Based on Direct Synchronous and Asynchronous Coupling

Cited by 20 publications

References 22 publications

Performance Enhancement of 60 GHZ Cmos Band Pass Filter Employing Oxide Height Virtual Increase

Performance Enhancement of 60 GHZ Cmos Band Pass Filter Employing Oxide Height Virtual Increase

Substrate Integrated Waveguide (Siw) Diplexer With Novel Input/Output Coupling and No Separate Junction

Low cost SIW Chebyshev bandpass filter with new input/output connection

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