Microwave CMOS Traveling Wave Amplifiers: Performance and Temperature Effects

Bhattacharyya, Kalyan B; Deen, M. Jamal

doi:10.1109/lmwc.2003.821498

Cited by 23 publications

(28 citation statements)

References 3 publications

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“…The first distributed oscillator based on [3] is similar to that reported in [1] except for the use of CPW over CPS. According to simulations in 0.18µm CMOS, this oscillator shows an oscillation frequency of 14.75 GHz.…”

Section: Introductionmentioning

confidence: 88%

“…In both of our CPW designs, the central signal conductor between two ground planes was made of the top metal layer of a six-metal 0.18µm CMOS process. The top metal layer offers low resistivity and a large separation from the lossy silicon substrate as reported in [3]. The multi-layer CPW experimentally exhibits the lowest loss, and was subsequently used in the proposed TWA designs.…”

Section: Introductionmentioning

confidence: 98%

“…Also, since it is difficult to realize inductors on silicon beyond several GHz, they can be replaced by coplanar waveguides (CPW) as onchip inductive elements as reported in [1], [2], [3]. This paper compares the experimental loss of two different designs of CPWs, first reported in [1] and [2], to identify the low-loss design.…”

Section: Introductionmentioning

confidence: 99%

“…The TWA of [2] uses complex four-transistor gain cells and operates at 10V rather than 1.8V. The TWA of [3] uses singletransistor gain cells. S-parameter simulations in the ADS simulator have been used for circuit design.…”

Section: Introductionmentioning

confidence: 99%

“…We have used the TSMC 0.18µm CMOS process ADS model for n-FETs and ADS CPW model for simulations of the circuits. To facilitate comparison, experimental results of the TWA reported in [3] are included, and compared against simulated results for the proposed TWA. From simulations, the proposed TWA improves upon the TWA in [3] by exhibiting a smoother gain slope versus frequency.…”

Section: Introductionmentioning

confidence: 99%

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1.2 V CMOS 1-10 GHz traveling wave amplifiers using coplanar waveguides as on-chip inductors

Bhattacharyya

Szymanski

Proceedings. 2004 IEEE Radio and Wireless Conference (IEEE Cat. No.04TH8746)

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-The feasibility of using standard 0.18µm CMOS technology for low cost wideband radio frequency integrated circuits (RFICs) at ~10GHz is demonstrated. Two different designs of coplanar waveguides (CPWs) have been fabricated for loss comparison and the low-loss design has been identified. The measured loss for the 0.5mm long low-loss design is 0.32dB at 10GHz. A monolithically integrated four-stage traveling wave amplifier (TWA) with n-FET cascode gain cells is proposed, with CPWs as the on-chip inductive elements, and is being fabricated. Simulated results indicate a 10dB gain at 1GHz and unity-gain frequency of 12GHz. This TWA is also compared with measured results of a previously reported five-stage TWA with single n-FET gain cells. A new design for a distributed oscillator using a TWA is proposed and is currently being fabricated.

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Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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1.2 V CMOS 1-10 GHz traveling wave amplifiers using coplanar waveguides as on-chip inductors

Bhattacharyya

Szymanski

Proceedings. 2004 IEEE Radio and Wireless Conference (IEEE Cat. No.04TH8746)

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Analysis and design of ultra‐wideband low noise amplifier using complementary structure with series inductive peaking technique and shunt feedback

Kazemi

Hayati

2021

Circuit Theory & Apps

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In this paper, an ultra-wideband low noise amplifier (LNA) is presented using 0.18-μm RF CMOS technology. A complementary structure with series inductive peaking technique is introduced by using two inductor-loops to achieve flat gain. In the first and third stages, two complementary structures are utilized to achieve a high and flat gain, a wideband input impedance matching and a low noise figure. In addition, a shunt feedback is utilized to increase input impedance matching and stability. In the second stage, a common source structure is used as interstage, which increases the À3 dB bandwidth. The designed LNA presents a high and flat gain of 15.6-16.5 dB, an excellent input return loss better than À11 dB and a good NF of 2.2-3 dB in the frequency range of 3.1-10.6 GHz. Also, the proposed structure consumes 6.8 mW from a 0.8-V supply voltage and has an IIP3 of À4 dBm at 6.5 GHz. The proposed structure only occupies 0.59 mm 2 .

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Performance degradation of some on‐chip finite‐ground coplanar waveguide (FGCPW)‐built passive devices at high temperature

Wang¹,

Mao²,

Shi³

et al. 2006

Micro & Optical Tech Letters

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At different temperatures, the performance degradation of on-chip finite-ground coplanar waveguides (FGCPWs) and FGCPW-built meander-line inductors are investigated in this article. These passive devices were all fabricated on a double-layer polyimide and GaAs substrates and often used in monolithic microwave integrated circuits. It is shown that the increase in temperature causes the increase in series resistance or conductive loss of the metallization planes, and the temperature coefficient of series resistance depends on both frequency and metallization thickness. At given metal plane thickness and operating frequency, the conductive attenuation constant increases linearly with increasing temperature. Because of the increase in conductive loss, the maximum of Q-factor of each meander-line inductor decreases linearly with increasing temperature. While the temperature effect on the parasitic coupling between two parallel FGCPW stubs or between two neighboring inductors can be neglected, even the temperature reaches 438 K.

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Microwave CMOS Traveling Wave Amplifiers: Performance and Temperature Effects

Cited by 23 publications

References 3 publications

1.2 V CMOS 1-10 GHz traveling wave amplifiers using coplanar waveguides as on-chip inductors

1.2 V CMOS 1-10 GHz traveling wave amplifiers using coplanar waveguides as on-chip inductors

Analysis and design of ultra‐wideband low noise amplifier using complementary structure with series inductive peaking technique and shunt feedback

Performance degradation of some on‐chip finite‐ground coplanar waveguide (FGCPW)‐built passive devices at high temperature

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