Microstructures and dielectric properties of Zn₂SnO₄ thin films by sputtering from a ZnO doped ceramic target

Highly Efficient Amorphous Zn2SnO4 Electron-Selective Layers Yielding over 20% Efficiency in FAMAPbI3-Based Planar Solar Cells

“…Figure d shows the variations in the space-charge-limited current (SCLC) for am-ZTO and TiO 2 ESLs . The electron mobility of ESL films can be obtained by fitting the J – V curves using the following equation, J = (9/8)­ε 0 ε r V 2 / d 3 , where J is the current density, and ε 0 and ε r are the vacuum permittivity and relative permittivity values of ZTO (10.2) and TiO 2 (41.4); d is the thicknesses of ZTO (50 nm) and TiO 2 (80 nm), and V is the applied voltage. The evaluated mobility of am-ZTO ESL is 1.3 × 10 –5 cm 2 V –1 s –1 , which is greater than the 6.7 × 10 –6 cm 2 V –1 s –1 for TiO 2 .…”

Effect of tin on bandgap narrowing and optical properties of ZnO–Zn2SnO4 electrospun nanofibre composite

“…Zn2SnO4 has been synthesized by several methods; mechanochemical [13], thermal evaporation [14] hyrothermal [15] and sputtering [16]. Few researchers have attempted to investigate different compositions and ratio of Zn and Sn in the ZnO-Zn 2 SnO 4 composite; Bai et al [17] used molar ratio 2: 1of Zn to Sn, Wang and Wang [18] have also tried weight per cent ratio of 9: 1, Chen et al [19] also used a molar per cent of 75% Zn to 25% Sn, while Iglesias et al [20] have also used molar concentration of 0.1, 1 and 10 mol per cent of Sn in the ZnO-Zn 2 SnO 4 composite.…”