Growth and dielectric characterizations of zinc stannate thin films deposited by RF magnetron sputtering

Chen, Yih-Chien; Shen, Yan-Ru

doi:10.1080/10584587.2018.1522212

Cited by 8 publications

(3 citation statements)

References 10 publications

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“…In this experiment, deposition condition was set up using a 100-W RF power source, an operating frequency of 1365 Hz, a chamber base pressure of 7.7  10 -6 Torr and gas pressure of 5 mTorr. Pure argon was used as sputter gas and oxygen as reactive gas by composition 75% and 25%, respectively [17]. Distance between target and substrate is about 120 mm non-perpendicular and a deposition time of 60 min.…”

Section: Deposition Of Thin Filmmentioning

confidence: 99%

Characterization and structural analysis of RF magnetron sputtered strontium stannate thin films

et al. 2021

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This paper presents physical and morphology properties of strontium stannate (SrSnO3) perovskite-type as a candidate of an n-type material thin film for organic-inorganic hybrid diode heterojunction for optoelectronics application. Typical wet-process of SrSnO3 deposition produce thick film and having 10 -8 S/cm order in conductivity. The SrSnO3 thin films were deposited on ITO glass substrates by RF magnetron sputtering using a purity 99.9% SrSnO3 target with 5.0 mTorr of gas pressure and 100 W of RF power at room temperature. The gas composition of pure argon (75%) and reactive oxygen gas (25%) was used for 60 min. XRD diffraction patterns revealed that the thin films are orthorhombic crystal structure with lattice parameter a=5.7040 Ǻ, b=8.06 Ǻ and c=5.7080 Ǻ with a strong orientation in the (002) direction. SEM images showed that films exhibited uniform surface morphology with a roughness average of Ra=2.258 nm and thickness of 311 nm. The EDX spectrum confirmed the presence of O, Sr, and Sn elements in the films with 75.22%, 8.29%, 16.49% in atomic number, respectively. The films were having a conductivity of 8.3310 2 S/cm with low resistivity of 12.410 -3 -cm.

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Section: Deposition Of Thin Filmmentioning

confidence: 99%

Characterization and structural analysis of RF magnetron sputtered strontium stannate thin films

et al. 2021

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“…Depending on the ratio of elements in ZnO-SnO 2 system, there are two compounds: zinc metastannate ZnSnO 3 with a perovskite structure and zinc orthostannate Zn 2 SnO 4 with a reverse spinel structure [1][2][3]. Zinc orthostanate, which is an n-type semiconductor, due to its low toxicity, high electron mobility, resistance to high temperatures and thermodynamic stability is used in gas analyzers, photocatalysts, photovoltaic devices, transparent electrodes and lithium batteries [4][5][6]. Recently, zinc orthostannate has been used as a buffer layer in solar cells due to its high optical transparency and significant resistivity, which makes it a promising material for new highly efficient solar cells [7,8].…”

Section: Introductionmentioning

confidence: 99%

Study of the Influence of Anionic Composition of Salts on Synthesis of Zinc Orthostannate by the Sol-Gel Method

et al. 2021

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The effect of anionic composition of zinc salts upon interaction with tin (IV) chloride on preparation of zinc orthostannate by the sol-gel method was studied. It was determined that the minimum temperature for the synthesis of zinc orthostannate was 800 °C. It was revealed that when zinc chloride was used, tetraaminezinc chloride was formed, which decomposed during firing. When zinc acetate or zinc sulfate was used, the synthesis of zinc orthostannate was not fully completed up to 1100 °C.

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“…Furthermore, the ZTO has high electron affinity (5.3 eV) for which it catches attention as a hole extracting material in polymer and organic solar cells [16]. Likewise, besides the solar cell application, amorphous ZTO thin films have widely been used for flexible field-effect transistors (FETs) [17] and thin-film transistors (TFTs) [18].…”

Section: Introductionmentioning

confidence: 99%

Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

et al. 2020

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In this study, the impact of compositional variation of highly resistivity transparent (HRT) metal oxide ZTO deposited by co-sputtered technique has been studied. The atomic composition has been tailored by the change of RF power and subsequent thermal oxygenation in mixed nitrogen and oxygen atmosphere. A phase transition from ZnSnO3 to ZnSnO4 was observed in the X-ray diffraction spectra, indicating the possible oxygen incorporation into the films during the thermal annealing process. Uniform microstructures with compact interconnected grains of around 6-7 nm were found in SEM images while no significant changes been observed upon oxygenation. Besides, the significant alteration of electronic properties was noticed as an effect of compositional variation via oxygenation. All the films showed above 85% of optical transmittance in the visible light spectrum. The optimum optoelectronic properties for RF power has been determined as of 50W (ZnO) and 10W (SnO2) via thermal oxygenation at 400 o C where the ratio O/(Zn+Sn) become around 1.6. The significant effect of oxygenation has been realized via primarily fabricated solar cells where the cell with ZnSnO4 HRT shows higher efficiency than the ZnSnO3.

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Growth and dielectric characterizations of zinc stannate thin films deposited by RF magnetron sputtering

Cited by 8 publications

References 10 publications

Characterization and structural analysis of RF magnetron sputtered strontium stannate thin films

Characterization and structural analysis of RF magnetron sputtered strontium stannate thin films

Study of the Influence of Anionic Composition of Salts on Synthesis of Zinc Orthostannate by the Sol-Gel Method

Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

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