Microstructure, surface morphology and optical properties of N-incorporated Ga2O3 thin films on sapphire substrates

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga 2 O 3 films

“…The improved crystallinity decreases the radiation recombination caused by the defects, and further decreases the peak intensity. Similarly, Sun et al [23] also report that the crystalline quality has an effect on the non‐radiation recombination and radiation recombination for non‐equilibrium photogenerated carriers. There are two factors influencing the PL intensity: one is the defects on the surface of the film and second is defects in the film.…”

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga 2 O 3 films

“…The (−111) diffraction peak of β‐Ga 2 O 3 :Nb thin film that annealed in N 2 is slightly stronger than those of others, indicating that trace amounts of N atoms may be incorporated on the lattice sites. As reported by Liu et al [22], Sun et al [5] and Kim et al [23], the incorporating of N atoms has an active effect on the crystalline quality of β‐Ga 2 O 3 :Nb films. Therefore, the observed slightly stronger diffraction peak in film annealed in N 2 indicates that annealing in N 2 and incorporating N atoms can improve the crystalline quality of films.…”

“…Introduction: Thin-film transparent conducting oxides β-Ga 2 O 3 , a wide bandgap semiconductor, show superior performance in ultraviolet (UV) photodetector [1,2], gas sensors [3] and metalsemiconductor field-effect transistor [4]. Up to present, a large number of methods have been employed to prepare the β-Ga 2 O 3 films, such as radio-frequency (RF) magnetron sputtering [5][6][7], pulsed laser deposition [8][9][10], molecular beam epitaxy [11][12][13], metal-organic chemical vapour deposition [14][15][16], low pressure chemical vapour deposition [17] and so on. RF magnetron sputtering has a wide applicability in laboratory researches because of the high deposition rates and the temperature of substrate has no relevant change during the sputtering.…”

Regulation of oxygen vacancies in nitrogen-doped Ga2O3 films for high-performance MSM solar-blind UV photodetectors

“…The higher temperature actuates more N atoms to dope into the films, causing a decrease in ionicity due to the O sites being replaced with N atoms to form Ga–N bonds, thereby reducing the band gap value. 41 Besides, as the growth temperature continues to increase, the calculated band gap of β-Ga 2 O 3 is 4.52 eV, 4.72 eV, and 4.72 eV, corresponding to N-600, N-700 and N-800, respectively. Among them, the β-Ga 2 O 3 films grown at 600 °C has the smallest band gap.…”

“…The decrease in band gap is probably attributed to the decrease in ionicity due to the formation of Ga–N bonds by nitrogen doping. 41 Another reason is that the improvement of crystallization quality due to decrease in the concentration of V O caused by N-doped atoms can minish the band gap value. Consequently, the introduction of N-doped atoms can greatly enhance the photoelectric detection performance.…”