Microstructure of epitactically grown GaAs/ErAs/GaAs

Abstract

A series of GaAs/ErAs/GaAs epilayer heterostructures has been grown on (100)GaAs substrates by molecular beam epitaxy and characterized by high-resolution transmission electron microscopy and Rutherford backscattering measurements. Good epitaxy of the ErAs on the GaAs is demonstrated. The top GaAs layer is usually epitactically aligned with ErAs/GaAs in most areas; however, growth of (111)GaAs on (100)ErAs has also been observed. Small grains are present in the top GaAs layer which are twinned on {111} with respect to epitactic grains. These give rise to GaAs {122}/ErAs(100) phase boundaries. The {122} oriented GaAs grains do not continue throughout the GaAs growth but are overgrown by the neighboring epitactic grains.

Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics

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Magnetic properties of DyAs and DyP (001) films

“…2 The chemical and structural stability and compatibility of these compounds with GaAs and their potential for high power device applications have attracted a lot of attention. 3,4 It has been shown that their electrical transport properties are influenced strongly by the magnetism, particularly by spin-disorder scattering. 5 This finding provides renewed stimulus for exploring the magnetic behavior in this system.…”

Study of molecular-beam epitactic growth of GaAs on (100) ScxE1−xAs/GaAs

“…It should be noted that HREM (Figs. 3,(5)(6)(7)(8)(9) confirms that both interfaces in the GaAs/ Sc,gErO,,As/GaAs epilayers are flat on the atomic scale.…”