Microstructure evolution of sputtered BiSb–Te thermoelectric films during post-annealing and its effects on the thermoelectric properties

Jeon, Seong-Jae; Jeon, Haseok; Na, Sekwon; Kang, Stephen Dongmin; Lyeo, Ho-Ki; Hyun, Seungmin; Lee, Hoo-Jeong

doi:10.1016/j.jallcom.2012.11.040

Cited by 19 publications

(12 citation statements)

References 21 publications

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“…All peaks could be assigned to the rhombohedral structure, as previously reported [24][25][26]. The peaks exactly correspond to the (006), (015), (1010), (0111), (0015) and (115) reflections of the Bi0.5Sb1.5Te3 compound in the stable Bi2Te3 phase [24][25][26]. In addition, the chemical composition and weight percentages of p-type Bi2Te3 powder were measured using the EDX (Energy-dispersive X-ray spectroscopy) of SEM [22] and its chemical formula was calculated as Bi0.5Sb1.5Te3.…”

Section: Resultssupporting

confidence: 81%

See 1 more Smart Citation

Thermoelectric performance of electrophoretically deposited p-type Bi2Te3 film

Talebi

Ghomashchi

Talemi

et al. 2019

Applied Surface Science

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Section: Resultssupporting

confidence: 81%

“…No other phases and no changes were identified because of the sintering process. All peaks could be assigned to the rhombohedral structure, as previously reported [24][25][26]. The peaks exactly correspond to the (006), (015), (1010), (0111), (0015) and (115) reflections of the Bi0.5Sb1.5Te3 compound in the stable Bi2Te3 phase [24][25][26].…”

Section: Resultssupporting

confidence: 79%

Thermoelectric performance of electrophoretically deposited p-type Bi2Te3 film

Talebi

Ghomashchi

Talemi

et al. 2019

Applied Surface Science

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“…The results of XRD for the n-BT and p-BST films are consistent with the previous results. [17][18][19] The grain sizes of the thin films were evaluated using the Debye-Scherrer equation (D = k λ/Bcosθ), where k is a constant (= 0.89), λ is the radiation wavelength (= 1.5401 Å), B is the full width at half maximum (FWHM), and θ is the diffraction angle from the XRD pattern at (1010) peaks for both n-BT and p-BST films. 20 From the XRD results, we obtained the average grain sizes of n-BT and p-BST to be ∼91 − 94 nm and ∼30 − 112 nm, respectively.…”

Section: Resultsmentioning

confidence: 99%

Thermoelectric characterization and fabrication of nanostructured p-type Bi0.5Sb1.5Te3 and n-type Bi2Te3 thin film thermoelectric energy generator with an in-plane planar structure

Park

Ahn

et al. 2016

AIP Advances

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This paper presents in-plane bismuth-telluride-based thermoelectric (TE) energy generators fabricated using metal-shadow and radio-frequency sputtering methods at room temperature. The TE energy generators consist of four couples of 300-nm-thick nanostructured Bi2Te3 (n-BT) and Bi0.5Sb1.5Te3 (p-BST) thin films used as n-type and p-type materials, respectively, on a Si substrate for the p/n junctions of the TE energy generators. Furthermore, the effect of annealing treatment of both n-BT and p-BST thin films on the electrical and TE properties as well as the TE performance of the TE energy generators is discussed. By varying the temperature between the hot and cold junction legs of the n-BT/p-BST in-plane TE energy generators annealed at 200 °C, the maximum output voltage and power are determined to be ∼3.6 mV and ∼1.1 nW, respectively, at a temperature difference of 50 K. The output powers increased by ∼590% compared to that of the as-grown TE generator at a temperature difference of 90 K. This improvement in the TE performance is attributed to the enhancement of the electrical conductivity after heat treatment. From a numerical simulation conducted using a commercial software (COMSOL), we are confident that it plays a crucial role in determining the dimension (i.e., thickness of each leg) and material properties of both n-BT and p-BST materials of the in-plane TE energy generators.

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“…Moreover, the effects of the nanostructures and morphologies of Sb 2 Te 3 thin films, including the strain and grain size, on the temperature-dependent thermal transport are also important with regard to further understanding of the thermal properties of these films. This is especially true since grain size and strain may play a significant role in thermal transport [23]. For example, it has been reported that the effects of strain in TE materials enhance the thermal performance, since the thermal conductivity increases as the compressive strain increases, while it decreases with increasing tensile strain [24,25].…”

Section: Introductionmentioning

confidence: 99%

Effect of grain size on thermal transport in post-annealed antimony telluride thin films

et al. 2015

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The effects of grain size and strain on the temperature-dependent thermal transport of antimony telluride (Sb2Te3) thin films, controlled using post-annealing temperatures of 200°C to 350°C, were investigated using the 3-omega method. The measured total thermal conductivities of 400-nm-thick thin films annealed at temperatures of 200°C, 250°C, 300°C, 320°C, and 350°C were determined to be 2.0 to 3.7 W/m · K in the 20 to 300 K temperature range. We found that the film grain size, rather than the strain, had the most prominent effect on the reduction of the total thermal conductivity. To confirm the effect of grain size on temperature-dependent thermal transport in the thin films, the experimental results were analyzed using a modified Callaway model approach.

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Microstructure evolution of sputtered BiSb–Te thermoelectric films during post-annealing and its effects on the thermoelectric properties

Cited by 19 publications

References 21 publications

Thermoelectric performance of electrophoretically deposited p-type Bi2Te3 film

Thermoelectric performance of electrophoretically deposited p-type Bi2Te3 film

Thermoelectric characterization and fabrication of nanostructured p-type Bi0.5Sb1.5Te3 and n-type Bi2Te3 thin film thermoelectric energy generator with an in-plane planar structure

Effect of grain size on thermal transport in post-annealed antimony telluride thin films

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