Microstructure dependent physical properties of evaporated tin sulfide films

Abstract

In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energy band gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275°C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of ∼105cm−1. SnS films could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices.

Optical properties of tin sulphide (SnS) thin film estimated from transmission spectra

“…SnS is a p-type semiconductor compound with an indirect band gap between of 1.0 and 1.5 eV [1,[4][5][6][7], and direct band gap between 1.39 eV [8] and 2.33 eV [9] depending on the method of preparation and heat treatment temperature. The phase diagrams of temperature-composition for the group IV-VI are particularly very important in the synthesis and design of these compounds [10].…”

Structure and optical properties of SnS thin film prepared by pulse electrodeposition

“…Additionally, a variety of methods have been employed to prepare SnS thin films, such as chemical bath deposition [5], spray pyrolysis [3], etc. [18][19][20] investigations have been carried out to synthesize device-grade SnS films and test their suitability for different applications. Recently, Avellaneda et al [21] prepared chemically deposited SnS film-based heterostructures and studied their performance by annealing them at different temperatures.…”

The effect of anneal temperature on physical properties of SnS films

“…[18][19][20]. A large number of investigations have been carried out to synthesize device-grade SnS films and test their suitability for different applications.…”