Optical properties of tin sulphide (SnS) thin film estimated from transmission spectra

Abdelrahman, Abubaker Elshiekh; Yunus, Wan Mahmood Mat; Arof, A. K.

doi:10.1016/j.jnoncrysol.2012.03.022

Cited by 46 publications

(17 citation statements)

References 21 publications

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“…This discrepancy may be the result of the existence of a very thin layer of b-Sn on the top of those samples since it will affect the reflectance and transmittance measurements and hence the absorption data. Another contribution to explain the discrepancy may be found in [9] where it is shown that the indirect transition energy of SnS films with a thickness of 750 nm has a value of 1.32 eV which is closed to the value we found for sample SGB570. That same reference also shows that the transition energy increases with decreasing film thickness.…”

Section: Resultscontrasting

confidence: 75%

“…Therefore, this difficulty is increased when growth is performed in a vacuum system. In the literature, thin films of SnS have been prepared by several methods including thermal evaporation [6][7][8][9], electron beam evaporation [10,11], spray pyrolysis [12], electrodeposition [13,14], chemical bath deposition (CBD) [15][16][17][18][19], sol-gel [20] vacuum evaporation [21] and dc magnetron sputtering [22]. Each method has its own characteristics in producing homogeneous and defect free thin film materials.…”

Section: Introductionmentioning

confidence: 99%

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Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin films

Sousa

Cunha

Fernandes

2014

Journal of Alloys and Compounds

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Tin sulphide thin films have been grown on soda-lime glass substrates through the annealing of RF-magnetron sputtered SnS 2 precursors. Three different approaches to the annealing were compared and the resulting films thoroughly studied. One series of precursors was annealed in a tubular furnace directly exposed to a flux of sulphur vapour plus forming gas, N 2 + 5%H 2 , and at a constant pressure of 500 mbar. The other two series of identical precursors were annealed in the same furnace but inside a graphite box with and without elemental sulphur evaporation again in the presence of N 2 + 5%H 2 and at the same pressure as for the sulphur flux experiments. Different maximum annealing temperatures for each set of samples, in the range of 300-570°C, were tested to study their effects on the properties of the final films. The resulting phases were structurally investigated by X-Ray Diffraction (XRD) and Raman spectroscopy. Annealing of SnS 2 precursors in sulphur flux produced films where SnS 2 was dominant for temperatures up to 480°C. Increasing the temperature to 530°C and 570°C led to films where the dominant phase became Sn 2 S 3. Annealing of SnS 2 precursors in a graphite box with sulphur vapour at temperatures in the range between 300°C and 480°C the films are multi-phase, containing Sn 2 S 3 , SnS 2 and SnS. For high annealing temperatures of 530°C and 570°C the films have SnS as the dominant phase. Annealing of SnS 2 precursors in a graphite box without sulphur vapour at 300°C and 360°C the films are essentially amorphous, at 420°C SnS 2 is the dominant phase. For temperatures of 480°C and 530°C SnS is the dominant phase but also same residual SnS 2 and Sn 2 S 3 phases are observed. For annealing at 570°C, according to the XRD results the films appear to be single phase SnS. The composition was studied using energy dispersive spectroscopy being then correlated with the annealing temperature. Scanning electron microscopy studies revealed that the SnS films exhibit small grain structure and the film surface is rough. Optical measurements were performed, from which the band gap energies were estimated. These studies show that the direct absorption transitions of SnS are at 1.68 eV and 1.41 eV for annealing in graphite box with and without elemental sulphur evaporation, respectively. For the indirect transition the values varied from 1.49 eV to 1.37 eV. The results of this work show that the third approach is better suited to produce single phase SnS films. However, a finer tunning of the duration of the high temperature plateau of the annealing profile is required in order to eliminate the b-Sn top layer.

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Section: Resultscontrasting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin films

Sousa

Cunha

Fernandes

2014

Journal of Alloys and Compounds

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“…Presently, many methods are employed to fabricate SnS and SnSe nanomaterials. Typical synthetic methods include chemical bath deposition [7][8][9] , thermal evaporation 10,11 , electrodeposition 12,13 , spray pyrolysis technique 14,15 , sputtering 16 , etc. Different morphological SnS and SnSe nanomaterials were prepared by using the above methods, including nanoparticles 17,18 , nanorods 19 , nanoflakes 20 , nanofibers 21 , films 2,22 , nanoplate 23 , etc.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Characterization and Photocatalytic Performance of SnS Nanofibers and SnSe Nanofibers Derived from the Electrospinning-made SnO2 Nanofibers

Dong

et al. 2017

Mat. Res.

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SnO 2 nanofibers were fabricated by calcination of the electrospun PVP/SnCl 4 composite nanofibers. For the first time, SnS nanofibers and SnSe nanofibers were successfully synthesized by doublecrucible sulfurization and selenidation methods via inheriting the morphology of SnO 2 nanofibers used as precursors, respectively. X-ray diffraction (XRD) analysis shows SnS nanofibers and SnSe nanofibers are respectively pure orthorhombic phase with space group of Pbnm and Cmcm. Scanning electron microscope (SEM) observation indicates that the diameters of SnS nanofibers and SnSe nanofibers are respectively 140.54±12.80 nm and 96.52±14.17 nm under the 95 % confidence level. The photocatalytic activities of samples were studied by using rhodamine B (Rh B) as degradation agent. When SnS or SnSe nanofibers are employed as the photocatalysts, the respective degradation rates of Rh B solution under the ultraviolet light irradiation after 200 min irradiation are 92.55 % and 92.86 %. The photocatalytic mechanism and formation process of SnS and SnSe nanofibers are also provided. More importantly, this preparation technique is of universal significance to prepare other metal chalcogenides nanofibers.

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“…SnS is an IV-VI metal chalcogenide and known for narrow bandgap [9]. SnS is a double layered lattice with cleavage planes perpendicular to the c axis [10]. It is a p-type semiconductor and its electrical properties can be controlled by doping [11].…”

Section: Introductionmentioning

confidence: 99%

Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films

Kafashan

Azizieh

Vatan

2016

Journal of Alloys and Compounds

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Optical properties of tin sulphide (SnS) thin film estimated from transmission spectra

Cited by 46 publications

References 21 publications

Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin films

Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin films

Synthesis, Characterization and Photocatalytic Performance of SnS Nanofibers and SnSe Nanofibers Derived from the Electrospinning-made SnO2 Nanofibers

Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films

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