In this paper, we present an ultra‐high resolution organic light‐
emitting diodes (OLEDs) pixels patterned by conventional photo‐lithography via imbuing high chemical and physical resistance to
commercial light‐emitting polymers through the silicon networked
orthogonal gel process. Especially, when silicon networked
orthogonal polymers gel layers are pattered by reactive ion etch, a in‐situ non‐volatile etch‐blocking layer (EBL) is formed to prevent
pattern distortion or damage. This unique feature not only slows the
etch rate but also enhances the anisotropy of etch direction, leading
to achieve ultra‐high resolution multicolor OPSG‐based OLED
patterns (up to 4,500 pixels per inch) through photolithography. This
patterning strategy is expected to provide a novel paradigm toward
ultrahigh‐resolution OLED microdisplays.