2015
DOI: 10.1007/s11581-015-1403-5
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Microstructure and supercapacitive properties of rf-sputtered copper oxide thin films: influence of O2/Ar ratio

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Cited by 34 publications
(12 citation statements)
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“…3):Csp=ImdtdV,where C sp is the specific capacitance (in F g −1 ), I is the charge/discharge current, t is the time of discharge, V is the voltage difference between the upper and lower potential limits, and m is the mass of the active material [39]. Using Eq.…”
Section: Resultsmentioning
confidence: 99%
“…3):Csp=ImdtdV,where C sp is the specific capacitance (in F g −1 ), I is the charge/discharge current, t is the time of discharge, V is the voltage difference between the upper and lower potential limits, and m is the mass of the active material [39]. Using Eq.…”
Section: Resultsmentioning
confidence: 99%
“…Where C sp is the specific capacitance (in Fg −1 ), I is the charge/discharge current, t is the time of discharge, V is the voltage difference between the upper and lower potential limits, and m is the mass of the active material [59]. TNFs electrode demonstrates the C sp values of the 75, 50, 35.7 and 22.7 Fg −1 respectively at current densities of 1, 5, 10, 100 mAg −1 .…”
Section: Electrochemical Propertiesmentioning
confidence: 99%
“…Further, during deposition, thermally activated parameters such as the relaxation time to dissipate the kinetic energy of sputtered species, surface diffusion and structural changes in the surface are effectively influenced by the oxygen partial pressure and the substrate temperature. A previous work showed that changes in the phase of copper oxide films from metallic copper to Cu 2 O and Cu 2 O to Cu 4 O 3 and then to CuO were observed by varying the ratio of the O 2 /Ar gas mixture from 1:25 to 1:1 [42]. The reported capacitance for the films was 357 F g −1 at a low current density of 0.5 mA cm −2 .…”
Section: Introductionmentioning
confidence: 95%
“…Among these film deposition processes, radio-frequency (RF) magnetron sputtering is one of the most pre-eminent industrial practical techniques to achieve high-quality and uniform thickness films with the required chemical composition [35]. For two decades, RF magnetron sputtering has become the most popular deposition technique for the growth of crystalline CuO films [36][37][38][39][40][41][42][43][44][45]. Further, during deposition, thermally activated parameters such as the relaxation time to dissipate the kinetic energy of sputtered species, surface diffusion and structural changes in the surface are effectively influenced by the oxygen partial pressure and the substrate temperature.…”
Section: Introductionmentioning
confidence: 99%
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