Microstructure and property of (Si-MoSi2)/SiGe thermoelectric convertor unit

Lin, J.; Tanihata, Kimiaki; Miyamoto, Yoshinari; Kido, Hiroyasu

doi:10.1016/b978-044482548-3/50098-6

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…Because of the high thermal expansion coefficient of MoSi2 (8.3x10-6/K), an excess of MoSi2 will lead to a large mismatch in thermal expansion between the electrode and SiGe although the electrical resistivity can be lowered. Based on the finite element analysis on the thermal residual stresses in this structure [1], a linear variation of the thermal expansion coefficient was constructed from the SiGe to the surface layer in order to obtain an optimum distribution of internal stress. The second and third layers made up of SiGe with 10 and 5 vol% MoSi2, respectively.…”

Section: Fabrication and Microstructuresmentioning

confidence: 99%

Fabrication and Evaluation of Graded(Si-MoSi2)/SiGe Thermoelectric Materials by HIP Sintering.

Lin

Miyamoto

Kido

1998

THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY

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Section: Fabrication and Microstructuresmentioning

confidence: 99%

Fabrication and Evaluation of Graded(Si-MoSi2)/SiGe Thermoelectric Materials by HIP Sintering.

Lin

Miyamoto

Kido

1998

THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY

Self Cite

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“…electrode and thermoelectric element has also been evaluated. [43][44][45] However, the development of electrodes that are robust at high temperatures is still under development despite those efforts.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Module of SiGe Bulk Alloys Forming p‐n Junction at the Hot Side

Fujimoto¹,

Nagase

Ohshima

et al. 2022

Adv Eng Mater

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Thermoelectric power generation is a potential technology for providing green energy. It is expected to be able to convert enormous amounts of waste heat to electrical energy. To realize this technology, further increases in conversion efficiency and durability are essential. In particular, durability is a critical issue, especially for harnessing high‐temperature heat sources. Thus, a thermoelectric module of SiGe is fabricated without electrodes at the hot side, which is the main cause of aging. Electronic conduction between p‐ and n‐type elements is alternatively introduced using a direct connection, forming a p‐n junction. Sufficiently low electrical contact resistances are achieved at the p‐n junction above 300 °C due to the dissipation of the depletion layer. The conversion efficiency is 2.0% with a hot‐side temperature of 700 °C. The power‐generation performance is constant during heat‐run tests conducted at 700 and 500 °C under vacuum and air, respectively, for more than 450 h. The results demonstrate that a stable power‐generation technology using a thermoelectric module at high temperatures is established successfully.

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Thermoelectric Devices: A Review of Devices, Architectures, and Contact Optimization

Schierning

Nielsch

2017

Adv Materials Technologies

304

247

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In recent years, the substantially improved performance of thermoelectric (TE) materials has attracted considerable interest in studying the potential applications of the TE technique. Serving as the bridge between TE materials and applicable TE products, TE devices must be properly designed, engineered, and assembled to meet the required performance of TE products for cooling (thermoelectric cooler) and power generation (thermoelectric generator). The principle feasibility of the TE technique has been demonstrated using a variety of different materials and processing technologies, and many different architectures of TE devices have been successfully realized. This review discusses the architectures of TE devices, including bulk and thin‐film TE devices, TE devices with flexible designs, pn‐junction‐based TE devices that provide robust solutions for high operation temperatures, and the meta‐material‐based transverse TE devices. In addition, the assembly of TE devices involves contact layers on which the reliability of TE devices depends. Thus solutions to contact issues, including bonding strength, contact resistance, and thermomechanical stress, are also reviewed.

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Microstructure and property of (Si-MoSi2)/SiGe thermoelectric convertor unit

Cited by 3 publications

References 2 publications

Fabrication and Evaluation of Graded(Si-MoSi2)/SiGe Thermoelectric Materials by HIP Sintering.

Fabrication and Evaluation of Graded(Si-MoSi2)/SiGe Thermoelectric Materials by HIP Sintering.

Thermoelectric Module of SiGe Bulk Alloys Forming p‐n Junction at the Hot Side

Thermoelectric Devices: A Review of Devices, Architectures, and Contact Optimization

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