1995
DOI: 10.1016/0921-4534(95)00209-x
|View full text |Cite
|
Sign up to set email alerts
|

Microstructure and properties of artificial grain boundaries in epitaxial YBA2Cu3O7−δ thin films grown on [001] tilt YZrO2 bicrystals

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
6
0

Year Published

1995
1995
2015
2015

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 27 publications
(6 citation statements)
references
References 24 publications
0
6
0
Order By: Relevance
“…The data do not, however, rule out a tunneling model because of the extremely inhomogeneous nature of grain boundaries in YBa 2 Cu 3 O 7−␦ . The microstructure of grain boundaries in thin film samples is typically very complex, 29,30 with structures that include nanoscale faceting 27,31 and microscale meandering 32 of the grain boundary. The capacitance per unit area of the grain boundary scales as the inverse of the boundary thickness ͑C / A = ͑ r 0 ͒ / t͒ whilst the resistance area product will probably scale approximately as R n A ϰ e −B͑t͒t , where B͑t͒ is a tunneling parameter.…”
Section: Discussionmentioning
confidence: 99%
“…The data do not, however, rule out a tunneling model because of the extremely inhomogeneous nature of grain boundaries in YBa 2 Cu 3 O 7−␦ . The microstructure of grain boundaries in thin film samples is typically very complex, 29,30 with structures that include nanoscale faceting 27,31 and microscale meandering 32 of the grain boundary. The capacitance per unit area of the grain boundary scales as the inverse of the boundary thickness ͑C / A = ͑ r 0 ͒ / t͒ whilst the resistance area product will probably scale approximately as R n A ϰ e −B͑t͒t , where B͑t͒ is a tunneling parameter.…”
Section: Discussionmentioning
confidence: 99%
“…While the first two factors are process-induced defects that can be rectified using careful process control, the third factor arises as a result of the misorientation across the grain boundary. The effect of grain boundary misorientation on transport properties has been studied by several researchers in recent years [1][2][3][4][5][6][7][8]. Dimos et al [1] reported that in thin films all boundaries with a misorientation angle greater than 10 • act as weak links and J c of these samples is significantly lower than that of their singlegrain counterparts.…”
Section: Introductionmentioning
confidence: 99%
“…TEM investigations of YBCO thin films grown on various STO bicrystals with misorientations of 24°, 36°, 53° and 67° were performed by various research teams. [78], [79], [80], [81], [82], [83] From these studies, it follows that the meandering behaviour observed does not depend on the misorientation of the bicrystal, but on the growth of the thin film. Even for small misorientations, thin film samples show GB meandering.…”
Section: Influence Of the Ybco Growth Process On Grain Boundary Strucmentioning
confidence: 81%
“…They also observed an increased facetting of the growth islands and consequently of the meandering. Alarco et al [81] [83] who also detected GB meandering.…”
Section: Influence Of the Ybco Growth Process On Grain Boundary Strucmentioning
confidence: 95%