“…Because the fabrication of high density SiC f /SiC is essential, a range of techniques, such as reaction sintering (RS), 16 chemical vapor infiltration (CVI), 17 polymer impregnation and pyrolysis (PIP), 18 nano-infiltrated transient eutectoid (NITE) 19 and electrophoretic deposition (EPD)-based technique, [20][21][22][23][24][25][26] have been used to infiltrate the matrix phase into the voids of a fiber-preform. Among these, EPD-based technique has several advantages, such as precise controllability of the composition, simple deposition apparatus, fast and even growth rate, and ease of depositing multilayer films with a controlled thickness.…”