2015
DOI: 10.1016/j.jeurceramsoc.2014.09.011
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Fabrication of SiCf/SiC composites by alternating current electrophoretic deposition (AC–EPD) and hot pressing

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Cited by 34 publications
(17 citation statements)
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“…Silicon carbide ceramic matrix composites reinforced by continuous SiC fibers (SiC f /SiC) have the advantages of low density, wear resistance, high specific strength, high-temperature resistance, nonbrittle fracture, etc. [1][2][3] However, there are many microcracks resulted from the mismatch of coefficient of thermal expansion (CTE) between the matrix and the fiber. 4 The microcracks plays the role of the diffusion channel, through which, the oxidizing medium can damage the interface and the fiber at high temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon carbide ceramic matrix composites reinforced by continuous SiC fibers (SiC f /SiC) have the advantages of low density, wear resistance, high specific strength, high-temperature resistance, nonbrittle fracture, etc. [1][2][3] However, there are many microcracks resulted from the mismatch of coefficient of thermal expansion (CTE) between the matrix and the fiber. 4 The microcracks plays the role of the diffusion channel, through which, the oxidizing medium can damage the interface and the fiber at high temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Figure B provides an OM image of the polished surface of the hot‐pressed SiC f /SiC composite. The hot‐pressed composites had an alternating layered structure of fiber‐rich and matrix‐rich layers, as shown in general in the composites fabricated by hot pressing . The matrix‐rich layers existed because of the surface adsorbed extra matrix phase.…”
Section: Resultsmentioning
confidence: 98%
“…The hot-pressed composites had an alternating layered structure of fiber-rich and matrix-rich layers, as shown in general in the composites fabricated by hot pressing. 24,31 The matrix-rich layers existed because of the surface adsorbed extra matrix phase. Small pores in the intrabundle regions were observed, while the matrix-rich region showed a highly densified morphology.…”
Section: Resultsmentioning
confidence: 99%
“…13 It can be seen from Figure 1b that the characteristic peak of SiO 2 (1050 cm −1 ) disappears after HF etching, indicating that SiO 2 on the surface of SiC powder reacts with HF. [20][21][22] It can be seen from the zeta potential analysis that the removal of impure ions by pickling and HF etching SiO 2 , followed by calcination to form a new SiO 2 layer, is advantageous for the dispersion of SiC particles. 18,19 It can be seen from Figure 2 SEM pictures that after 2.0% HCl washing (Figure 2A), 20% HF etching ( Figure 2B), and 750°C calcination treatment ( Figure 2C), the particle size and morphology of SiC powder did not change greatly, and all of them showed irregular sheet or block structure.…”
Section: Impure Ion Analysismentioning
confidence: 99%