Microstructure and growth kinetics of nanocrystalline diamond films deposited in large area/low temperature distributed antenna array microwave‐plasma reactor

Abstract

In this paper, we investigate a new distributed antenna array PECVD system, with 16 microwave plasma sources arranged in a 2D matrix, which enables the growth of 4-inch diamond films using H 2 /CH 4 /CO 2 gas mixture at low gas pressure, typically below 0.45 mbar, and at substrate temperature of 400 8C. The influence of substrate position with respect to elementary microwave sources is investigated for three sets of gas pressures in order to improve the diamond growth process in this low temperature/large area deposition setup. Results show that the nanocrystalline diamond films are formed of polycrystalline globular aggregates of 50-200 nm in size, depending on growth conditions, composed of diamond grains around 10-20 nm. An optimal deposition condition corresponding to a pressure of 0.45 mbar and a distance between substrate and microwave sources of 65 mm can be found. In these conditions, highest growth rate (60 nm h À1 ) with good nanocrystalline features, i.e. smallest grain size (10 nm) and lowest roughness (around 15 nm), is obtained.

Study of Low Temperature Deposition of Nanocrystalline Diamond Films on ZnO/LiNbO3 Layered Structures Suitable for Waveguiding Layer Acoustic Wave Devices

“…Figure exhibits the Raman spectrum obtained on S2 sample after NCD growth. It is comparable to what is usually obtained on silicon substrates treated in the DAA reactor . The FWHM of the diamond peak observed at 1332 cm −1 is slightly narrower than S1 sample with a value of 12 cm −1 .…”

“…27‐1402). The diamond grain size estimated from the XRD pattern is about 10 nm, which is similar to the value reported for the same growth conditions on silicon substrate …”

Self‐Assembled Silica Nanoparticles for Diamond Nano‐Structuration

“…The first step of the process consisted of fabricating a shadow mask using silica NPs. This step was optimized using 125 ± 15 nm thick nanocrystalline diamond (NCD) films deposited on 2 × 2 cm 2 silicon wafers using a distributed antenna array plasma assisted CVD system . The same technique was then applied to a 10 μm thick CVD film homoepitaxially grown on a High Pressure High Temperature (HPHT) type Ib substrate (3 × 3 mm 2 ) under optimized conditions in a high power plasma CVD reactor …”

Enhanced Diamond Nucleation on Cemented Carbide Cutting Tools by Employing Electrostatic Self-Assembly Seeding

“…% Co) is chosen as substrate. Prior to diamond film deposition, two methods were used for pre-treat of the substrates: 1) The substrates were treated with Murakami solution (10 g K 3 [Fe(CN) 6 ] + 10 g KOH + 100 mL H 2 O) followed by an acid solution (10 ml 98% H 2 SO 4 + 100ml 33% H 2 O 2 ) to remove cobalt from the surface. 2) PVD interlayer was utilized to hinder the diffusion of cobalt from the substrate.…”

“…[1][2][3][4] Research activities on nanocrysatlline diamond thin films have increased rapidly. [5,6] For the application in high performance Micro and Nano Electro-Mechanical System, carbide tools in micro size with sharp cutting edge are highly needed. Diamond can be coated on cemented carbide tools to improve the machining performance.…”