Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering

In Situ X-ray Diffraction Study of the Phase Transition of Nanocrystalline In(OH)3 to In2O3

“…In recent years, In 2 O 3 nanostructures have been prepared by a variety of methods, including the vapor-liquid-solid (VLS) approach [9][10][11], rapid heating [12], sol-gel processing [8,13,14], template-assisted growth [15], thermal decomposition [16,17], mechanochemical processing [18], and reactive magnetron sputtering [19]. Among above methods, reactive magnetron sputtering is preferable for film preparation.…”

Etchability Dependence of InOx and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

“…The significant change verified in their morphology and the presence of tin (Sn) as the doping impurity (it is known that tin segregates to grain boundaries in response to temperature increase [8]) maybe responsible for that difference. The fine grained structure observed at low substrate temperatures gives rise to larger-sized grain structure material at high substrate temperatures, more evident for ITO films [9]. Figure 2 shows grazing-incidence X-ray diffraction patterns of InO x and ITO [10] thin films for the two extreme substrate temperatures in the range 25-190 °C.…”

N‐Type Transparent Semiconducting Oxides

“…For instance, with a ZnO target, if a pure argon atmosphere is used, the target surface will be less oxidized, favoring the sputtering of zinc atoms rather than ZnO aggregates. However, for higher %O 2 target oxidation starts to play an important role, decreasing the growth rate due to the arguments given in the previous point [5,66]. Additionally, the energy transfer from an Ar + incident ion to the ejected target material is larger when the mass of the ejected particle is closer to that of the ion, resulting in a greater sputtering rate in the absence of oxygen [64].…”