Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

Abstract

We have developed a simple technique for fabricating Sn nanocrystals in thin thermally grown SiO 2 layers using low energy ion implantation followed by thermal annealing. The formed Sn nanocrystals have excellent size and depth uniformity. Their average diameter is 4.2 nm with a standard deviation of 1.0 nm. Our experimental results clearly reveal that a stable depth of Sn exists in the SiO 2 layer at about 2 nm from the SiO 2 /Si interface. Most of the Sn nanocrystals reside near this stable depth. The I -V characteristics of the diode structure show a clear Coulomb blockade region of 0.12 V and a Coulomb staircase at 4.2 K. A Coulomb blockade region around 0 V was observed until reaching a temperature of 77 K. The features of these nanocrystals will open up new possibilities for the creation of novel devices.

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

“…For further information the reader is referred to [135,141]. Similar experimental results regarding the narrow Sn cluster band near the Si−SiO 2 interface can be found in [142,143].…”

New insight into nanoparticle precipitation by electron beams in borosilicate glasses

“…Nobel metals such as gold and silver are amongst the most promising and most widely studied metallic nanoparticles in glass, while copper is sometimes included in extended studies [3]. In comparison with bulk metal, metallic nanoparticles embedded in an insulating matrix reveal a wide range of useful physical features and provide excellent prospects for significant technological applications such as nanoplasmonic devices [4], memory switching devices [5], electrical charge storage [6], light emission [7], optical non-locality [8], optical devices [9], and also a common colorant for glasses [10].…”

Aging effects on the nucleation of Pb nanoparticles in silica

“…The formation of dispersed second phase nanoparticle ͑NP͒ systems in silica films via ion beam synthesis have been extensively studied in connection with technical applications exploring luminescent [1][2][3] or electrostatic [4][5][6] ͑Cou-lomb blockade͒ properties for the development of silicon based devices. The primary concept behind the ion beam synthesis method relies on the formation of a supersaturated solid solution produced by the implantation process, followed by the nucleation and growth of the new phase upon post-implantation thermal treatments.…”