2009
DOI: 10.1016/j.ceramint.2009.03.012
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Microstructure and dielectric properties of low temperature sintered ZnNb2O6 microwave ceramics

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Cited by 41 publications
(9 citation statements)
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“…Many researchers have shown that sintering of ZnNb 2 O 6 can be done around 900°C by adding low melting point glasses or oxides (e.g. CuO, V 2 O 5 , Bi 2 O 3 , B 2 O 3 ) [10][11][12]. Unfortunately, the Q 9 f value is reduced to *10,000 and the temperature coefficient of resonant frequency is not acceptable.…”
Section: Introductionmentioning
confidence: 95%
“…Many researchers have shown that sintering of ZnNb 2 O 6 can be done around 900°C by adding low melting point glasses or oxides (e.g. CuO, V 2 O 5 , Bi 2 O 3 , B 2 O 3 ) [10][11][12]. Unfortunately, the Q 9 f value is reduced to *10,000 and the temperature coefficient of resonant frequency is not acceptable.…”
Section: Introductionmentioning
confidence: 95%
“…They are made by stacking ferrite layers and dielectric layers with internal electrode pastes, and then cofired. The sintering temperature of ferrite and dielectrics must be below 900°C to ensure their cofiring with Ag internal electrode [2]. The properties of devices depend on the properties of the sintered ferrites, dielectrics and the quality of the interface.…”
Section: Introductionmentioning
confidence: 99%
“…For instance, temperature stable dielectric material systems with high‐ Q × f values and near zero τ f values are synthesized with the presence of ZnNb 2 O 6 ceramic in: ZrTi 2 O 6 , BiNbO 4 , TiO 2 , Zn(Ta 1− x Nb x ) 2 O 6 ceramics. Furthermore, appropriate amounts of V 2 O 5 –Bi 2 O 3 –CuO, B 2 O 3 –CuO, BiVO 4 , CaF 2 , CuV 2 O 6 , ZnO–V 2 O 5 additions are also effective to decrease the sintering temperature of ZnNb 2 O 6 ceramic and still maintain microwave dielectric properties.…”
Section: Introductionmentioning
confidence: 99%