Effect of sintering parameters on the microstructure and microwave dielectric properties of Ba(Zn1/3Nb2/3)O3–ZnNb2O6 Ceramics

Abstract

Ba(Zn 1/3 Nb 2/3 )O 3 -ZnNb 2 O 6 (BZNZ) composite ceramics were fabricated by conventional solid solution processing. After optimizing the composition, the effects of the sintering parameters, such as the heating rate, the soaking time, and the cooling rate on densities, microstructure, and microwave dielectric properties were investigated using orthogonal experimental design method. The results show that with increasing the content of Ba(Zn 1/3 Nb 2/3 )O 3 , the e r increases, while the Q 9 f value increases first, then decreases, and s f shifts to the negative value. The BZNZ ceramics with composition of 0.3Ba(Zn 1/3 Nb 2/3 ) O 3 -0.7ZnNb 2 O 6 show the optimal dielectric properties. The results of orthogonal experimental design show that sintering parameters play an important role in the microstructure and dielectric properties. The ceramics show obvious duplex-grain structure. The importance sequence of the sintering parameters is: cooling rate [ heating rate [ soaking time. The sintering parameters were optimized, with 0.3Ba(Zn 1/3 Nb 2/3 )O 3 -0.7ZnNb 2 O 6 ceramic sintered at a heating rate of 2°C/min, soaking time of 8 h, and cooling in the air. Samples have the excellent dielectric properties: e r = 32.75, Q 9 f = 34,100, and s f = -10.2 ppm/°C.

Crystal structures and microwave dielectric properties of (1-x)Ba(Zn1/3Nb2/3)O3 − xBaWO4 (0 ≤ x ≤ 0.25) ceramics

“…To obtain good dielectric properties, appropriate amounts of CoO [57], ZrO 2 [6], NiO [23], BaCu(B 2 O 5 ) [5] and ZnNb 2 O 6 [7] were added into BZN ceramics. Table 4 demonstrates the densification sintering temperature and microwave dielectric properties of some typical Ba(Zn 1/3 Nb 2/3 )O 3 -based ceramics.…”

“…The good dielectric properties of 0.95Ba(Zn 1/3 Nb 2/3 )O 3 − 0.05BaZrO 3 were acquired by Huang [6] as follows: ε r = 42, Q × f = 96,000 GHz, and τ f = 27 ppm °C−1 . Li [7] added ZnNb 2 O 6 to BZN ceramics in order to lower the densification sintering temperature to 1200 °C, achieving excellent microwave dielectric properties with ε r = 32.75, Q × f = 34,100 GHz, and τ f = −10.2 ppm °C−1 .…”