Microstructure and cathodoluminescence study of GaN nanowires without/with P‐doping

Liu, Baodan; Hu, Tao; Wang, Zaien; Liu, Lizhao; Qin, Fuwen; Huang, Nan; Jiang, Xin

doi:10.1002/crat.201100574

Cited by 12 publications

(14 citation statements)

References 27 publications

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“…The armchair was found as the most stable conformation. However, it is possible to note the distortion in the extremities of this Table 1 Strain energy (eV) for armchair (5,5) 10 and zigzag (10,0) 10 models. armchair conformation (Fig.…”

Section: Resultsmentioning

confidence: 98%

“…In the zigzag and armchair conformations, the HOMO is mainly distributed over the border atoms, Table 4 Energy gap (eV) obtained by ab initio methods of GaNNT models for armchair (5,5) 10 and zigzag (10,0) 10 while the LUMO is located in the middle of the armchair conformation. We studied the border effects by adding saturation on the nanotube structures.…”

Section: Discussionmentioning

confidence: 99%

“…(A) armchair(5,5) and (B) zigzag (10,0) unsaturated GaNNT models and (C) armchair(5,5) and (D) zigzag (10,0) saturated GaNNT models after optimization. Large spheres represent Ga atoms and small spheres represent N atoms.…”

mentioning

confidence: 99%

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Electronic structure of GaN nanotubes

Sodré¹,

Longo²,

Taft³

et al. 2016

Comptes Rendus. Chimie

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a b s t r a c tNanotube properties are strongly dependent on their structures. In this study, gallium nitride nanotubes (GaNNTs) are analyzed in armchair and zigzag conformations. The wurtzite GaN (0001) surface is used to model the nanotubes. Geometry optimization is performed at the PM7 semiempirical level, and subsequent single-point energy calculations are carried out via HartreeeFock and B3LYP methods, using the 6-311G basis set. Semiempirical and ab initio methods are used to obtain strain energy, charge distribution, dipole moment, jHOMO-LUMOj gap energy, density of states and orbital contribution. The gap energy of the armchair structure is 3.82 eV, whereas that of the zigzag structure is 3.92 eV, in agreement with experimental data.

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Section: Resultsmentioning

confidence: 98%

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Electronic structure of GaN nanotubes

Sodré¹,

Longo²,

Taft³

et al. 2016

Comptes Rendus. Chimie

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“…In comparison to the progress in the InGaN and AlGaN alloys, the research involving the common-anion nitride-based ternary alloy such as the dilute-P GaNP alloy is still at its early stage 13 14 15 16 17 18 19 20 21 22 . The crystal growth of dilute-P GaNP was first successfully carried out by Igarashi and co-workers with halide vapor phase epitaxy 13 .…”

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confidence: 99%

First-Principle Electronic Properties of Dilute-P GaN1−xPx Alloy for Visible Light Emitters

Tan

Borovac

Sun

et al. 2016

Sci Rep

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A study on the electronic properties of the dilute-P GaN1−xPx alloy using First-Principle Density Functional Theory (DFT) calculations is presented. Our results indicate a band gap energy coverage from 3.645 eV to 2.697 eV, with P-content varying from 0% to 12.5% respectively. In addition, through line fitting of calculated and experimental data, a bowing parameter of 9.5 ± 0.5 eV was obtained. The effective masses for electrons and holes are analyzed, as well as the split-off energy parameters where findings indicate minimal interband Auger recombination. The alloy also possesses the direct energy band gap property, indicating its strong potential as a candidate for future photonic device applications.

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“…12 Magnesium has been an efficient p-type dopant for GaN-based optoelectronic and electronic devices up to now. 13 Several studies have been reported on Mg-doped GaN structures, including the influence of Mg doping on the structural properties, 14 the surface charge properties with Mg incorporation, 15 and the photoelectrochemical measurements on Mg-doped GaN nanowires. 16 However, because of the randomly formed nanowire structures, previous reports have found it quite difficult to understand the precise structural formation and growth mechanisms.…”

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confidence: 99%

Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures

Lee

2019

ACS Photonics

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The efficiency of semiconductor light-emitting diodes (LEDs) has been largely limited by the extremely inefficient p-type conduction on InGaN heterostructures. Here we report highly efficient p-type GaN nanocrystals fabricated by p–i–n nanowire heterostructures using selective area epitaxial growth (SAG). With the different Mg-doping growth conditions in the p-GaN nanostructure, different structure formations and various Mg incorporations were confirmed by detailed scanning electron microscopy and cathodoluminescence analysis. The growth mechanism of p-GaN nanocrystal formation on nanowire structures was also suggested by CL mapping measurements. Single nanowire LEDs exhibited different current–voltage behaviors from various p-GaN nanocrystal formations. The resulting p-contacted InGaN/GaN nanowire LEDs showed a low turn-on voltage (∼2.3 V), reduced resistance, and enhanced electroluminescence intensity at 532 nm wavelength, which is very important for realizing high-efficiency InGaN LEDs operating in the green and red wavelength ranges. This demonstration provides important insight into the fundamental formation characteristics of p-GaN nanocrystals on the nanowire heterostructure and also offers a viable path for realizing multifunctional nanoscale photonic and electronic devices.

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Microstructure and cathodoluminescence study of GaN nanowires without/with P‐doping

Cited by 12 publications

References 27 publications

Electronic structure of GaN nanotubes

Electronic structure of GaN nanotubes

First-Principle Electronic Properties of Dilute-P GaN1−xPx Alloy for Visible Light Emitters

Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures

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