Microstructural surface analysis of Ni/Cu front contact after peel force test to improve contact adhesion

Lee, Sangeun; Shin, Eun Gu; Rehman, Atteq Ur; Lee, Soo Hong

doi:10.1080/00218464.2015.1136929

Cited by 1 publication

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…16,17) For this reason, a nickel seed layer has been deposited before copper plating because adhesion was improved by forming nickel silicide (NiSi x ) after the annealing process. [18][19][20] In the application of copper plating metallization to the SHJ solar cells, poor adhesion of the plated copper film to the indium tin oxide (ITO) layer is one of the issues even though Li et al reported that adhesion can be improved after an ITO pretreatment. 8) To improve the adhesion of the ITO and the copper interface, a thin metal seed layer, which is deposited by physical vapor deposition (PVD) or light-induced plating (LIP), has been investigated with some materials such as Ni, Ti, Cr, and Ag.…”

Section: Introductionmentioning

confidence: 99%

Contact resistivity and adhesion of copper alloy seed layer for copper-plated silicon heterojunction solar cells

Lee

et al. 2018

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

To reduce optical loss and contact material cost in silicon heterojunction (SHJ) solar cells, copper plating has been considered as a suitable metallization technique. However, a plated copper contact on indium tin oxide (ITO) generally has low adhesion reliability. For this reason, suitable seed layer materials are required for adhesive copper plating. As a requirement of a suitable seed layer material, contact resistance between the seed and the ITO is also important, as well as the adhesion, since a high series resistance results in a low fill factor. In this work, we applied copper alloy (Cu-X) materials as a seed layer that was deposited by co-evaporating copper with other metals. The contact resistivity (ρ c ) values of the Cu-X seed layer and copper-plated contact with the Cu-X seed layer (Cu-X/Cu) on the ITO layer were evaluated by the transfer length method (TLM). Also, tape tests were carried out to check the adhesion of the Cu-X/Cu contact.

show abstract