If perovskite solar cells (PSCs) with high power conversion efficiencies (PCEs) are to be commercialized, they must achieve long-term stability, which is usually assessed with accelerated degradation tests. One of the persistent obstacles for PSCs has been successfully passing the damp-heat test (85°C and 85% relative humidity), which is the standard for verifying the stability of commercial photovoltaic (PV) modules. We fabricated damp heat–stable PSCs by tailoring the dimensional fragments of two-dimensional perovskite layers formed at room temperature with oleylammonium iodide molecules; these layers passivate the perovskite surface at the electron-selective contact. The resulting inverted PSCs deliver a 24.3% PCE and retain >95% of their initial value after >1000 hours at damp-heat test conditions, thereby meeting one of the critical industrial stability standards for PV modules.
The performance of perovskite solar cells with inverted polarity (
p-i-n
) is still limited by recombination at their electron extraction interface, which also lowers the power conversion efficiency (PCE) of
p-i-n
perovskite-silicon tandem solar cells. A ~1 nm thick MgF
x
interlayer at the perovskite/C
60
interface through thermal evaporation favorably adjusts the surface energy of the perovskite layer, facilitating efficient electron extraction, and displaces C
60
from the perovskite surface to mitigate nonradiative recombination. These effects enable a champion
V
oc
of 1.92 volts, an improved fill factor of 80.7%, and an independently certified stabilized PCE of 29.3% for a ~1 cm
2
monolithic perovskite-silicon tandem solar cell. The tandem retained ~95% of its initial performance following damp-heat testing (85 Celsius at 85% relative humidity) for > 1000 hours.
Sputtered nickel oxide (NiOx) is an attractive hole‐transport layer for efficient, stable, and large‐area p‐i‐n metal‐halide perovskite solar cells (PSCs). However, surface traps and undesirable chemical reactions at the NiOx/perovskite interface are limiting the performance of NiOx‐based PSCs. To address these issues simultaneously, an efficient NiOx/perovskite interface passivation strategy by using an organometallic dye molecule (N719) is reported. This molecule concurrently passivates NiOx and perovskite surface traps, and facilitates charge transport. Consequently, the power conversion efficiency (PCE) of single‐junction p‐i‐n PSCs increases from 17.3% to 20.4% (the highest reported value for sputtered‐NiOx based PSCs). Notably, the N719 molecule self‐anchors and conformally covers NiOx films deposited on complex surfaces. This enables highly efficient textured monolithic p‐i‐n perovskite/silicon tandem solar cells, reaching PCEs up to 26.2% (23.5% without dye passivation) with a high processing yield. The N719 layer also forms a barrier that prevents undesirable chemical reactions at the NiOx/perovskite interface, significantly improving device stability. These findings provide critical insights for improved passivation of the NiOx/perovskite interface, and the fabrication of highly efficient, robust, and large‐area perovskite‐based optoelectronic devices.
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