Microstructural Investigation of Co-P by TEM

Abstract

The microstructure of electrodeposited Co-P films was investigated using transmission electron microscopy (TEM). The use of ultramicrotomy for sample preparation made it possible to obtain cross sections parallel to the growth direction of the film. Co-P films deposited under constant current conditions are amorphous and no nonuniformity could be identified at a scale of a few to a few tens of nanometers. This is in contradiction with the often made assumption that Co-P electrodeposited under constant current conditions has a columnar microstructure. Co-P layers electrodeposited in pulsed current conditions show a clear multilayer structure. © 2004 The Electrochemical Society. All rights reserved.

Surface morphology evolution during electrodeposition of amorphous CoP films

“…Columnar growth has been used to explain stress and surface morphology results for evaporated amorphous Cu-Ti and Co-Tb films [19]. CoP films electrodeposited under different conditions from ours were not found to be columnar [20], though, and additional studies are needed to clarify this point. If l c is a measure of column width, it is interesting that growth on a substrate with an additional Cu layer gives wider columns than growth on the considerably smoother Au substrate.…”

Study on Groove Shape of CMP Polishing Pad: A Review

“…And also the slurry drains out of the pad easily because of the unfold groove. Positive (Negative) logarithm spirality pattern, which has to do with the contact pattern and conditioning time, has great influence on polishing efficiency [10][11][12].…”

Thermal Stability and Interface Diffusion Behaviors of Electrolessly Deposited CoWP and Cu Films

“…14,15 The amorphous structure is found to effectively inhibit the diffusion of atoms along grain boundaries and to enhance diffusion barrier ability. [14][15][16][17][18] Thus, amorphous Co-and Ni-based alloy films ͑such as Ni-P, 16 Co-P, 17 and Ni-Co-P 18 ͒, which are deposited by electroless plating, have been proposed as candidates for diffusion barriers in Cu metallization. The addition of a small amount of W in the Co-P films is found to further prevent the precipitation of minor crystalline phases and to improve the thermal stability of the films.…”