2006
DOI: 10.1016/j.jnucmat.2006.02.007
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Microstructural development in cubic silicon carbide during irradiation at elevated temperatures

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Cited by 162 publications
(97 citation statements)
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“…2,19,20 In the present study, quantitative results of their size and bulk number density showed a good agreement with the previous reports. The loops were identified or speculated to be of interstitial type in Ref.…”
Section: Discussionsupporting
confidence: 93%
See 1 more Smart Citation
“…2,19,20 In the present study, quantitative results of their size and bulk number density showed a good agreement with the previous reports. The loops were identified or speculated to be of interstitial type in Ref.…”
Section: Discussionsupporting
confidence: 93%
“…This is supported by the reports showing void formation in SiC at 4.9 dpa, 1050˚C in a neutron study 20 and 10 dpa, 1000˚C in a self-ion study. 19 Note that the population of loops and voids were reported to be nearly saturated by 1 dpa at the irradiation temperature below 1460˚C. 20 In a condition such that most vacancies are no longer isolated, recombination terms can be ignored and the sink strength depending strongly on the population of vacancy clusters may be assumed constant.…”
Section: Discussionmentioning
confidence: 99%
“…The microstructural changes in 3C-SiC under neutron and self ion irradiation have originally been summarised by Katoh et al [98] and updated by Snead et al [49] in Figure 7 into three overlapping regimes. At low temperatures and low irradiation fluences the main defects are point defects (called black spot defects due to their appearances in weak beam dark field TEM images) and small interstitial clusters in various configurations.…”
Section: Bombardment-induced Defect Typesmentioning
confidence: 99%
“…19) Fig reactors and ion accelerators. While these experiments have elucidated the species and sizes of defect clusters under various irradiation conditions, 25,26) the formation mechanism of defect clusters remains poorly understood. In the present study, the kinetics of defect cluster formation in ¢-SiC were numerically evaluated through a multiscale modeling approach, focusing on the nucleation and growth processes of SIA clusters.…”
Section: Multiscale Modeling Of Microstructural Change In Sic During mentioning
confidence: 99%